Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time

Thota, Narayana; Gurubhaskar, M.; Reddy, A. C. Kasi; Chandra, G. Hema; Mehta, B. R.; Tiwari, Ashutosh; Subbaiah, Y.P. Venkata

doi:10.1007/s10854-017-6974-7

Cited by 17 publications

(5 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With a conventional splitting value of 1.01 eV, the two detected peaks at 55.80 and 56.70 eV show the −2 oxidation state for Se [ 45 ] in CAZTSe. Overall, the oxidation states determined from Cu, Ag, Zn, Sn, and Se the core‐level spectra in the CAZTSe thin film are consistent with the existing results, [ 1,43 ] confirming the formation of the CAZTSe phase.…”

Section: Resultssupporting

confidence: 88%

“…[41] Pre-annealing/ selenization combined with high-temperature annealing of thin films decreases defect density, promotes recrystallization, and improves grain size, all of which boost the absorber layer's crystal quality. [42,43] To date, although there have been a few reports available on the growth of kesterite-based CAZTSe films, none of the reports illustrating the influence of PAT on the growth and physical properties of CAZTSe thin films have been found. Hence, in the present work, we adopted the PAT for the growth of the Ag-alloyed CZTSe thin films.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Patil,

Mondal,

Babujani

et al. 2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

In this work, the preparation of “Ag” alloying Cu2ZnSnSe4 films using a two‐step process, comprising vacuum evaporated ([Sn/ZnSe/Ag/Sn/ZnSe/Cu] × 2) precursor layer deposition on glass substrates followed by low‐temperature pre‐annealing treatment (PAT) in Se ambiance (200–400 °C) for 30 min and high‐temperature annealing at 500 °C for 1 min, is reported. The low‐temperature PAT provides adequate Se diffusion into precursor layers and plays a pivotal influence on the growth and properties of (Cu,Ag)2ZnSnSe4 films. The Zn/Sn and Se/metals ratios are found to be varied in the range 0.77–1.32 and 1.07–0.86 with PAT (200–400 °C) followed by annealing at 500 °C for 1 min. The precursor layers are pre‐annealed at 300 °C for 30 min, followed by annealing at 500 °C for 1 min, found to be nearly stoichiometric with uniform distribution of constituents. The valence states of the constituents are confirmed by X‐Ray photoelectron spectroscopy. Both X‐Ray diffraction and Raman studies confirm the formation of single‐phase (Cu,Ag)2ZnSnSe4 along (112) orientation with a strong Raman mode at 194 cm−1. Large and well‐defined grains with a mean size of 0.7 μm are seen in the field‐emission scanning electron microscope images. The (Cu,Ag)2ZnSnSe4 films exhibit a direct bandgap of 1.12 eV and p‐type conductivity with high mobility, 5.23 cm2 V−1 s−1.

show abstract

Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Patil,

Mondal,

Babujani

et al. 2024

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The results showed that the films had p‐type carrier density in the range of 10 17 to 10 19 cm −3 . It might be said that this high carrier density is due to CuSe 2 secondary phases which exhibited semi‐metallic behavior 26,83,84 . This results in a decrease in mobility of the films.…”

Section: Resultsmentioning

confidence: 99%

“…It might be said that this high carrier density is due to CuSe 2 secondary phases which exhibited semi-metallic behavior. 26,83,84 This results in a decrease in mobility of the films. Resistivity values of A1 and A2 films were inversely varied with their Cu/(Zn + Sn) ratio as shown by Liu et al 85 In addition, the lower carrier concentration of the A1 samples may be related to the formation of CuZn + SnZn deep donor defects.…”

Section: Resultsmentioning

confidence: 99%

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

View full text Add to dashboard Cite

Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

show abstract

“…Continued sulfurization for more than 60 min under this condition (170°C using 100 ppm H2S+4%H2+N2) for the sample seems to lead to "over-sulfurization" -the formation of sulfur-rich phase of CuS with Cu at 2+ valence versus 1+ in CZTS (Thota et al, 2017). Such an explanation is further supported by the EDS data for the samples: As mentioned before in Table 4.1, the 170°C-60min sulfurized sample has surface composition of near stoichiometry CZTS while the 170°C-180min sulfurized sample show faceted particles on surface with very low Zn and Sn content and Cu:S ratio ~1:1, suggesting they are sulfur-rich phase of CuS.…”

Section: Discussion On Formation Process Of Czts From Sulfurization Fmentioning

confidence: 95%

Synthesis, Processing, and Fundamental Phase Formation Study of CZTS Films for Solar Cell Applications

Awadallah¹

View full text Add to dashboard Cite

advice and support in the past years. My sincere thanks also to Dr. Andriy Durygin for the great help and guidance with the in situ Raman system design and implementation of my experiments over the years of my PhD study. I would also like to gratefully thank my research group members, Paniz Foroughi and Shichen Sun, for the great help and support during the past years of my PhD study. I greatly appreciate and acknowledge the University Graduate School at FIU for supporting me through Doctoral Evidence Acquisition (DEA) and Dissertation Year Fellowship (DYF) awards. Finally, I sincerely thank my lovely wife, Mariam, for her unflagging support, understanding, and for taking care of our daughter during the time I spent working on my research. vi

show abstract

Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time

Cited by 17 publications

References 49 publications

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Synthesis, Processing, and Fundamental Phase Formation Study of CZTS Films for Solar Cell Applications

Contact Info

Product

Resources

About

Growth and properties of Cu2ZnSnS4 thin films prepared by multiple metallic layer stacks as a function of sulfurization time

Cited by 17 publications

References 49 publications

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Synthesis, Processing, and Fundamental Phase Formation Study of CZTS Films for Solar Cell Applications

Contact Info

Product

Resources

About

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu_0.5Ag_0.5)₂ZnSnSe₄ Thin Films

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks