Growth and properties of III–V compound semiconductor heterostructure nanowires

Gao, Qiuming; Tan, Hark Hoe; Jackson, Howard E.; Smith, L. M.; Yarrison-Rice, J.M.; Zou, Jin; Jagadish, Chennupati

doi:10.1088/0268-1242/27/5/059501

Cited by 6 publications

(5 citation statements)

References 69 publications

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“…Since the surface state would degrade the performance of III-V NW-based devices on electrical transportation and light emission through scattering and a nonradiative recombination process [21,22]. Similar were results were reported on GaAs/AlGaAs [23][24][25], GaAs/GaInP [26], and InAs/InP [21] NWs with core-shell heterostructures. Besides, the type II and III band alignment of GaAs/GaSb and InAs/GaSb can help to produce the accumulation of the carriers on the core-shell interface of the heterostructures, achieving a high concentration of the carriers without the intended doping [27].…”

Section: Introductionsupporting

confidence: 77%

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

et al. 2017

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Abstract:In this paper, we demonstrated the growth of GaAs/GaSb core-shell heterostructured nanowires on GaAs substrates, with the assistance of Au catalysts by molecular-beam epitaxy. Time-evolution experiments were designed to study the formation of GaSb shells with different growth times. It was found that, by comparing the morphology of nanowires for various growth times, lateral growth was taking a dominant position since GaSb growth began and bulgy GaSb particles formed on the nanowire tips during the growth. The movement of catalyst Au droplets was witnessed, thus, the radial growth was enhanced by sidewall nucleation under the vapor-solid mechanism due to the lack of driving force for axial growth. Moreover, compositional and structural characteristics of the GaAs/GaSb core-shell heterostructured nanowires were investigated by electron microscopy. Differing from the commonly anticipated result, GaSb shells took a wurzite structure instead of a zinc-blende structure to form the GaAs/GaSb wurzite/wurzite core-shell heterostructured nanowires, which is of interest to the research of band-gap engineering. This study provides a significant insight into the formation of core-shell heterostructured nanowires.

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Section: Introductionsupporting

confidence: 77%

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

et al. 2017

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“…Figures [16][17][18][19] show that the changes in the conductance components of InAs changes are independent of temperature. The main part of the conductance is attributed to the part of the charge carriers.…”

Section: Methodsmentioning

confidence: 98%

“…An exhaustive review concerning these phenomena was undertaken by Meyer et al [5]. Such disorder was first described and interpreted by the so-called mobility spectrum by Beck and Anderson [6] and many papers have focused on this problem [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. For the proper characterisation of a multicarrier conduction system, the number of independent measurements must match the number of desired physical quantities.…”

Section: Introductionmentioning

confidence: 99%

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Wolkenberg

2013

Journal of Materials

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An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values G [S] of these components of charge transport were obtained. Also the scattering events for the investigated samples are presented. The analysis of the experimental results for three semiconductor compositions and different concentrations demonstrates the utility of our method in comparing the conductance of each component of the multilayered system as a function of temperature.

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“…Here, we report the current-voltage (I-V) characteristic of a suspended InP nanowire connected to two gold (Au) electrodes as a function of temperature. The nanowires were synthesized by a chemical vapour deposition (CVD) process [3], then transferred (ultrasonic agitation) onto a pre-patterned Si/SiO 2 substrate and electrically contacted to electrodes by focused ion-beam (FIB) based direct write technology which deposits platinum (Pt).…”

Section: I-v Characteristic Of An Inp Nanowirementioning

confidence: 99%

Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

et al. 2012

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Abstract:In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.

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Growth and properties of III–V compound semiconductor heterostructure nanowires

Cited by 6 publications

References 69 publications

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

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