Growth and properties of titania and aluminum titanate thin films obtained by r.f. magnetron sputtering

Kuo, Dong‐Hau; Tzeng, Kuo-Hwa

doi:10.1016/s0040-6090(02)00945-8

Cited by 26 publications

(11 citation statements)

References 32 publications

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“…This remark is valid for more conventional high-k dielectrics as well. For instance, suspiciously high values of the dielectric constant have been reported for titania thin films, 16 in which the ''dielectric constant'' has been observed to decrease by a factor of two when the thickness of the dielectric layer is increased by the same amount. 17 The most likely scenario capable of accounting for all our observations is that Ta 2 O 5 layers sputtered at high pressure behave as semiconductors rather than as insulators, owing to the presence of a large amount of defects acting as dopants.…”

Section: Resultsmentioning

confidence: 99%

Dielectric response of sputtered transition metal oxides

Iosad

Ruis

Morks

et al. 2004

Journal of Applied Physics

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We have investigated the dielectric properties of thin layers of five oxides of transition metals (Ta 2 O 5 , HfO 2 , ZrO 2 , (ZrO 2 ) 0.91 (Y 2 O 3 ) 0.09 , and Sn 0.2 Zr 0.2 Ti 0.6 O 2 ) sputtered from ceramic targets at different pressures. We find that layers deposited at low pressure behave as expected from literature, whereas layers deposited at high pressure all exhibit an anomalous dielectric response similar to that reported for the so-called ''colossal'' dielectric constant materials. The characterization of the thickness, frequency, and temperature dependence of the capacitance, as well as the comparison of film properties before and after annealing show that the anomalous dielectric response is due to quenched-in vacancies that act as dopants and cause the insulating layers to behave as semiconductors. An increase in quenched-in vacancies concentration with sputtering pressure results in a transition from normal to anomalous dielectric response and gradual increase in layer conductivity. In contrast, the refractive index does not depend on sputtering pressure. This observation indicates the possible application of these materials as transparent coatings with a tunable electrical conductivity.

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Section: Resultsmentioning

confidence: 99%

Dielectric response of sputtered transition metal oxides

Iosad

Ruis

Morks

et al. 2004

Journal of Applied Physics

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“…Thin films of TiO 2 have reported dielectric constants of 4-86. TiO 2 has been known as a non-stoichiometric oxide (TiO 2Àx ) with oxygen vacancies to compensate for the reduction of Ti 4þ to Ti 3þ [33].…”

Section: Discussionmentioning

confidence: 99%

Properties of CVD alumina–titania composite films grown at different CO2/H2 inputs

Kuo

Shueh

2004

Journal of Non-Crystalline Solids

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“…The TiO 2 films coated by sol-gel methods have poor abrasion resistance, which leads the TiO 2 films to be scratched easily off the glass. Other methods such as physical vapor deposition (PVD) [1] and liquid phase deposition [2] are also employed for the deposition of TiO 2 thin films on glass. But the PVD method has difficulty in the production of large area TiO 2 films on glass.…”

Section: Introductionmentioning

confidence: 99%