2016
DOI: 10.1007/s11664-016-4748-2
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Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

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Cited by 4 publications
(2 citation statements)
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“…Diethylzinc (DEZn) and silane (SiH 4 ) were utilized as p-type and n-type dopants, respectively. A more detailed preparation process and process parameters can be observed in the literature [15]. Two types of solar-cell structures used in this work are shown in Figure 1.…”
Section: Methodsmentioning
confidence: 99%
“…Diethylzinc (DEZn) and silane (SiH 4 ) were utilized as p-type and n-type dopants, respectively. A more detailed preparation process and process parameters can be observed in the literature [15]. Two types of solar-cell structures used in this work are shown in Figure 1.…”
Section: Methodsmentioning
confidence: 99%
“…SiGe heterostructures monolithically grown on Si are the ideal test bed for understanding alloying [8][9][10][11] and the interplay between elastic/plastic relaxation at the nanoscale [12][13][14][15][16][17][18][19][20][21][22] Their also being promising candidates for integrating optical communications into a CMOS platform, thanks to their optical properties potentially compatible with the C-band transmission window [23]. Ge wafers, on the other hand, are the substrates of choice for the epitaxial growth of high-efficiency multi-junction solar cells based on III-V semiconductors [24][25][26][27][28][29] and have also been shown to be suitable CMOS compatible templates for graphene overgrowth [30][31][32]. All these applications require a highlydemanding surface quality of the epi-ready Ge substrates.…”
Section: Introductionmentioning
confidence: 99%