Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

Arif, Omer; Zannier, Valentina; Li, Ang; Rossi, Francesca; Ercolani, Daniele; Beltram, Fabio; Sorba, L.

doi:10.1021/acs.cgd.9b01421

Cited by 18 publications

(14 citation statements)

References 36 publications

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“…Looking instead at the ε xx map, a sharp contrast is found at the first two interfaces, i.e., GaP/InGaP and InGaP/InP, where a few dislocations occur, while a gradual increase takes place in the topmost material (InP/InAsP/InAs layers). This observation of different behaviors between ε xx , increasing by gradual increments, and ε yy , increasing by sharp jumps, is indicative of some residual tetragonal distortion in the topmost layers [ 33 ]. However, this distortion is indeed small.…”

Section: Resultsmentioning

confidence: 99%

Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

Zannier

Rossi

et al. 2022

Materials

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In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are closely lattice-matched to silicon, suitable for the integration of in-plane InAs nanowires. Scanning electron microscopy reveals a perfect surface selectivity and uniform layer growth inside 150 and 200 nm large SiO2 mask openings. Compositional and structural characterization of the optimized structure performed by transmission electron microscopy shows the evolution of the major facet planes and allows a strain distribution analysis. Chemically uniform layers with well-defined heterointerfaces are obtained, and the topmost InAs layer is free from any dislocation. Our study demonstrates that a growth sequence of thin layers with progressively increasing lattice parameters is effective to efficiently relax the strain and eventually obtain high quality in-plane InAs nanowires on large lattice-mismatched substrates.

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Section: Resultsmentioning

confidence: 99%

Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

Zannier

Rossi

et al. 2022

Materials

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“…We can clearly see the In droplet on the top of NW, the InSb QD with larger diameter and the InAs stem with uniform diameter. The InSb QD shows the same kind of side facets of the InAs stem (i.e., {110} [ 8 , 46 ]). The other NWs depicted in panel (a) are representative SEM images of InSb/InAs QD NWs where the InAs top segment was grown at different temperatures, T InAs , as indicated in the figure.…”

Section: Resultsmentioning

confidence: 99%

“…Semiconductor nanowires (NWs) provide an excellent platform for the exploitation of lattice-mismatched materials in high-quality heterostructures [ 1 , 2 , 3 , 4 , 5 , 6 ], since strain relaxation can occur efficiently along the NW sidewalls [ 7 , 8 , 9 , 10 ] and the critical thickness is several orders of magnitude higher than in conventional 2D growth. Consequently, NW-based heterostructures provide a wide range of opportunities for bandgap engineering combining different materials [ 1 ].…”

Section: Introductionmentioning

confidence: 99%

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

et al. 2021

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The nanowire platform offers great opportunities for improving the quality and range of applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy. A systematic variation of the growth parameters for the InAs top segment has been investigated and the resulting nanowire morphology analyzed. We found that the growth temperature strongly influences the axial and radial growth rates of the top InAs segment. As a consequence, we can reduce the InAs shell thickness around the InSb quantum dot by increasing the InAs growth temperature. Moreover, we observed that both axial and radial growth rates are enhanced by the As line pressure as long as the In droplet on the top of the nanowire is preserved. Finally, the time evolution of the diameter along the entire length of the nanowires allowed us to understand that there are two In diffusion paths contributing to the radial InAs growth and that the interplay of these two mechanisms together with the total length of the nanowires determine the final shape of the nanowires. This study provides insights in understanding the growth mechanisms of self-catalyzed InSb/InAs quantum dot nanowires, and our results can be extended also to the growth of other self-catalyzed heterostructured nanowires, providing useful guidelines for the realization of quantum structures with the desired morphology and properties.

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“…As shown in figure 1(c) (left panel), the materials precursors injected into the growth chamber can opportunely be varied in order to obtain high quality heterostructures, e.g. in the radial direction (core-multishell heterostructures), with atomically sharp interfaces [27][28][29]. The control of the growth parameters also allows the variation of the NW diameter along the axis (figure 1(c)-right), which results in NWs with inclined sidewalls (tapering) [30].…”

Section: Realization Of Bottom-up Nanowire Arrays: a Brief Overviewmentioning

confidence: 99%

Particle swarm optimization of GaAs-AlGaAS nanowire photonic crystals as two-dimensional diffraction gratings for light trapping

et al. 2022

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Semiconductor nanowire ordered arrays represent a class of bi-dimensional photonic crystals that can be engineered to obtain functional metamaterials. Here is proposed a novel approach, based on a particle swarm optimization algorithm, for using such a photonic crystal concept to design a semiconductor nanowire-based two-dimensional diffraction grating able to guarantee an in-plane coupling for light trapping. The method takes into account the experimental constraints associated to the bottom-up growth of nanowire arrays, by processing as input dataset all relevant geometrical and morphological features of the array, and returns as output the optimised set of parameters according to the desired electromagnetic functionality of the metamaterial. A case of study based on an array of tapered GaAs-AlGaAs core-shell nanowire heterostructures is discussed.

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Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

Cited by 18 publications

References 36 publications

Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

Self-Catalyzed InSb/InAs Quantum Dot Nanowires

Particle swarm optimization of GaAs-AlGaAS nanowire photonic crystals as two-dimensional diffraction gratings for light trapping

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