Growth and structural properties of thick GaN layers obtained by sublimation sandwich method

Kamiński, Michał; Podsiadło, S.; Woźniak, Krzysztof; Jakieła, R.; Barcz, A.; Psoda, M.; Mizera, J.

doi:10.1016/j.jcrysgro.2006.11.338

Cited by 10 publications

(10 citation statements)

References 29 publications

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“…19,20 The lattice constants were optimized using the Perdew-Burke-Ernzerhof (PBE) functional with the van der Waals correction of density functional theory PBE-D3(BJ). The predicted lattice constants are in great agreement with the experimental values 21,22 compared to other theoretical works. 23−25 The structural relaxations are based on a k-grid density of about 0.2 Å −1 .…”

Section: ■ Computational Detailssupporting

confidence: 88%

“…The experimental lattice constant a used for GaN is 3.20 Å. 21 The relaxed lattice constants a of Sc 2. As displayed in Figure 2, For comparison, the experimental values 21,22 are also listed.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…21 The relaxed lattice constants a of Sc 2. As displayed in Figure 2, For comparison, the experimental values 21,22 are also listed. S1.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

et al. 2022

ACS Appl. Electron. Mater.

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Ultrawide-bandgap semiconductor heterojunctions Sc 2 O 3 / GaN and θ-Al 2 O 3 /GaN are explored in the framework of density functional theory (DFT). The dielectric-dependent hybrid (DDH) functional, which is superior to other semilocal hybrid functionals in describing the dielectric screening that is dominant in wide-bandgap materials, is adopted in this study. The calculated band gaps of GaN, Sc 2 O 3 , and θ-Al 2 O 3 can be well matched to the existing experimental measurements. Both Sc 2 O 3 /GaN and θ-Al 2 O 3 /GaN heterojunctions present type-I band alignments, and the valence/conduction band offsets of the Sc 2 O 3 /GaN and θ-Al 2 O 3 /GaN heterojunctions exhibit the values of 0.93/1.89 and 2.25/0.95 eV, respectively. The computational methods and procedures could be used to predict the band offsets of other wide-bandgap semiconductor heterojunctions.

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Section: ■ Computational Detailssupporting

confidence: 88%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

et al. 2022

ACS Appl. Electron. Mater.

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“…Herein, we report a way to obtain a micrometer sized silicon dioxide “hedgehog”‐like structure on a gallium droplet. The experimental conditions are described in detail in our previous reports . The method of obtaining such ordered structures of SiO 2 presented in this paper seems to be more effective and less complicated.…”

Section: Introductionmentioning

confidence: 89%

Synthesis of silicon dioxide cone shaped highly ordered hedgehog‐like microstructures on gallium droplets

Bialoglowski

Jastrzębski

Dominik

et al. 2015

Crystal Research and Technology

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A simple chemical transport method was used to obtain Gacore / SiO 2 -shell microstructures. The cone-shaped silica needles assembled in a highly ordered pattern on a gallium droplet. Morphology of those regularly arranged microstructures was present in scanning electron microscopy images. The chemical composition and structure were confirmed using energy dispersive X-ray and Raman spectroscopy. Such core-shell, gallium-silicon dioxide regular microstructures are reported for the first time.

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“…During the hydrogen measurement in a thin layer, the detection limit is restricted by the primary beam current density, which should not be too high to achieve appropriate depth resolution in the dynamic SIMS measurement. Therefore, the hydrogen detection limit for such a measurement places in the range of 10 17 -10 18 at/cm 3 as in the case of GaN:Mg layers [11,66,67]. For the GaN bulk material, the use of a primary beam with high current density can significantly lower this parameter.…”

Section: Hydrogen Measurement By Simsmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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Growth and structural properties of thick GaN layers obtained by sublimation sandwich method

Cited by 10 publications

References 29 publications

Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Synthesis of silicon dioxide cone shaped highly ordered hedgehog‐like microstructures on gallium droplets

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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Growth and structural properties of thick GaN layers obtained by sublimation sandwich method

Cited by 10 publications

References 29 publications

Accurate Band Offset Prediction of Sc2O3/GaN and θ-Al2O3/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Accurate Band Offset Prediction of Sc2O3/GaN and θ-Al2O3/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Synthesis of silicon dioxide cone shaped highly ordered hedgehog‐like microstructures on gallium droplets

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

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Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional

Accurate Band Offset Prediction of Sc₂O₃/GaN and θ-Al₂O₃/GaN Heterojunctions Using a Dielectric-Dependent Hybrid Functional