“…The past published reports on PDs indicate that in most of the PDs, GaN and silicon have been used as absorbing layers. – However, due to the blurring of optical signals between neighboring pixels, cross-talk of optical signals, low band gap, poor efficiency, and high cost of these materials, researchers take interest in other semiconductors like ZnS, CdS, V 2 O 5 , CeO 2 , CuO, ZnO, etc. ,– Out of these semiconducting materials, ZnO is the most preferable material for making PDs because of its unique properties like wide direct band gap (∼3.37 eV), large exciton energy (60 meV), nontoxicity, transparency, and thermal stability. – The most interesting property is its large excitonic binding energy of 60 meV at room temperature, which makes ZnO an efficient light emitter. – Also, the crystal growth of ZnO is easier than that in most semiconductors. Due to these unique desirable properties, ZnO can be essentially used as a high-response photodetector (PD) which could be fabricated with both Schottky and ohmic contacts .…”