2021
DOI: 10.1007/s10854-021-06121-z
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Growth and study of c-axis-oriented vertically aligned ZnO nanorods on seeded substrate

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Cited by 11 publications
(5 citation statements)
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“…In particular, the ZnO-NC sample exhibits a preferential growth in (002) direction as evidenced by the high intensity of the peak at 34.4°. [69] Moreover, the ZnO-ClR sample also shows a preference growth along the c-axis. According to previous studies, preferential growth directions depend on the pH of the initial solution and the counterion used.…”
Section: Characterization Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In particular, the ZnO-NC sample exhibits a preferential growth in (002) direction as evidenced by the high intensity of the peak at 34.4°. [69] Moreover, the ZnO-ClR sample also shows a preference growth along the c-axis. According to previous studies, preferential growth directions depend on the pH of the initial solution and the counterion used.…”
Section: Characterization Resultsmentioning
confidence: 99%
“…The observed peaks indicate a successful deposition of h‐ZnO for all the films. In particular, the ZnO‐NC sample exhibits a preferential growth in (002) direction as evidenced by the high intensity of the peak at 34.4° [69] …”
Section: Resultsmentioning
confidence: 99%
“…The past published reports on PDs indicate that in most of the PDs, GaN and silicon have been used as absorbing layers. However, due to the blurring of optical signals between neighboring pixels, cross-talk of optical signals, low band gap, poor efficiency, and high cost of these materials, researchers take interest in other semiconductors like ZnS, CdS, V 2 O 5 , CeO 2 , CuO, ZnO, etc. , Out of these semiconducting materials, ZnO is the most preferable material for making PDs because of its unique properties like wide direct band gap (∼3.37 eV), large exciton energy (60 meV), nontoxicity, transparency, and thermal stability. The most interesting property is its large excitonic binding energy of 60 meV at room temperature, which makes ZnO an efficient light emitter. Also, the crystal growth of ZnO is easier than that in most semiconductors. Due to these unique desirable properties, ZnO can be essentially used as a high-response photodetector (PD) which could be fabricated with both Schottky and ohmic contacts .…”
Section: Introductionmentioning
confidence: 99%
“…Comparing the properties of interfaces created by various deposition techniques is beneficial to understanding the interface structure and function. Several techniques were used for depositing thin films of ZnO 17 , 18 , 41 , 42 and Ag/ZnO nano-heterostructures. 9 , 24 , 29 , 43 , 44 Nevertheless, unless particular care is taken, the interface of Ag/ZnO nanostructures does not have a specific orientation, obscuring the effect of the native crystal polarity.…”
Section: Introductionmentioning
confidence: 99%
“…Comparing the properties of interfaces created by various deposition techniques is beneficial to understanding the interface structure and function. Several techniques were used for depositing thin films of ZnO ,,, and Ag/ZnO nano-heterostructures. ,,,, Nevertheless, unless particular care is taken, the interface of Ag/ZnO nanostructures does not have a specific orientation, obscuring the effect of the native crystal polarity. Also, due to the high surface-to-volume ratio in nano-heterostructures, the consequences of surface defects can mask other effects resulting from a “bulk”, or specifically the interface.…”
Section: Introductionmentioning
confidence: 99%