Growth and study of Tb3+ doped Nb2O5 thin films by radiofrequency magnetron sputtering: Photoluminescence properties

Monolayer WS2 electro- and photo-luminescence enhancement by TFSI treatment

“…Nb 2 O 5 /SiO 2 bilayers are used for the Bragg mirrors, with N P Nb 2 O 5 /SiO 2 periods on top, a SiO 2 cavity in the middle, and an Ag back mirror. At λ = 624 nm the refractive indices are n Nb2O5 = 2.325 [132],n SiO2 = 1.457 [133], n Ag = 0.0581 + i4.212 [134], n SLG = 2.787 + i1.443 [135,136], n hBN = 2.12 [137], n WS2 = 5.38 + i0.382 [138]. The layer thicknesses are d Nb2O5 = 67 nm, d SiO2 = 107 nm and d cav = 191 nm, while 1L-WS 2 /hBN(3 nm)/SLG is placed in the middle of the SiO 2 cavity layer.…”

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

“…Previous studies have indicated terbium (Tb) as a specific RE ion capable of emitting light at wavelengths of 490, 550, 580, and 620 nm due to the 5 D 4 -7 F J ( J = 6, 5, 4, 3) transitions. [11][12][13][14][15][16][17] Recently, we successfully grew Tb-doped Ga 2 O 3 films on insulating sapphire substrates using pulsed laser deposition (PLD). [18] Our investigation revealed intense emissions originating from 5 D 4 -7 F J ( J = 6, 5, 4, 3) transitions, which were prominently observed at room temperature.…”