Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction

Abstract

The Ag/n-ZnO/p-Si(100)/Al heterojunction diodes were fabricated by pulsed laser deposition of zinc oxide (ZnO) thin films on p-type silicon. The X-ray diffraction analysis shows the formation of ZnO thin film with hexagonal structure having strong (002) plane as preferred orientation. The energy band gap of ZnO films simultaneously deposited on quartz substrate was calculated from the measured UV-Visible transmittance spectra. High purity vacuum evaporated silver and aluminum thin films were used to make contacts to the n-ZnO and p-silicon, respectively. The current-voltage and capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterostructures were measured over the temperature range of 80-300 K. The Schottky barrier height and ideality factor were determined by fitting of the measured current-voltage data into thermionic emission diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. This decrease in barrier height and increase in ideality factor at low temperature are attributed to the occurrence Gaussian distribution of barrier heights. The capacitance-voltage characteristics of Ag/n-ZnO/p-Si(100)/Al heterojunction diode were also studied over the wide temperature range. Capacitance-voltage data are used to estimate the barrier height and impurity concentration in n-type ZnO.

Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode

“…The reason for obtaining and ideality factor higher than one is the serial resistance effect (Rs), which leads to the parts of the forward bias current-voltage curves that correspond to high voltages bend downwards. Two parameters are important in the linear and non-linear parts of the forward bias I-V plots [34]. These are n and Φb0.…”

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

“…The higher value of n is attributed to the presence of CoPc thin film layer, the presence of inhomogenities of the barrier height, the existence of interface states, and series resistance [26][27][28][29][30].…”

Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition

“…The dependence on laser fluence on deposition of AZO has been widely studied. In order to obtain sufficient growth rate and high quality films, typical fluence of 2-3 Jcm −2 for KrF [4][5][6][7][8] and 355 nm [8][9][10][11] lasers are used. At higher laser fluences, unwanted droplets are deposited [10,12] and the morphology, optical, electrical properties of the films deteriorate [13].…”