Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique

Botcha, V. Divakar; Hong, Yuehua; Huang, Zhi‐Zhen; Li, Zhiwen; Liu, Qiang; Wu, Jing; Lu, Youming

doi:10.1016/j.jallcom.2018.09.335

Cited by 28 publications

(12 citation statements)

References 50 publications

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“…The carbon peak appears at 284.6 eV as allocated to foreign carbon-based adulterate, which is used to calibrate all of the binding energy of the samples, whereas the oxygen element peak appears feasibly because of absorption of oxygen molecular species on the surface of both samples. The XPS spectra of the bulk and the laser-ablated In 2 Se 3 are similar to the typical In 2 Se 3 spectrum reported in the literature. , …”

Section: Resultssupporting

confidence: 82%

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Dhongade

Mutadak

Deore

et al. 2020

ACS Appl. Nano Mater.

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In the present study, we report a simple method to prepare indium(III) selenide (In2Se3) nanocubes synthesized by laser ablation in aqueous medium. The morphological characterization carried out using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) reveal that the nanocubes have an average size of 70 nm. X-ray diffraction and Raman analysis clearly imply formation of pure and crystalline In2Se3 phases only, without any impurity phases, despite laser ablation being carried out in aqueous medium. In addition, the field emission and charge carrier behavior of In2Se3 nanocubes have been investigated. The laser-ablated sample shows a cubical morphology having a 70 nm average particle size. The ultrafast transient absorption spectroscopy (UTAS) suggests the slow decay behavior of charge carriers and an increase in the trap state levels after laser ablation, in contrast to the untreated bulk sample. Surprisingly, the In2Se3 nanocubes on a carbon tape emitter exhibits superior FE properties characterized by lower values of turn-on and threshold fields as compared to In2Se3 nanowire emitters and the ability to deliver very large current density ∼2656 μA/cm2 by applying a field of 9.7 V/μm. Furthermore, the In2Se3 nanocube emitter showed very good emission stability at the pre-set value 10 μA over a duration of 5 h. The superior FE characteristics of the In2Se3 nanocube emitter is attributed to unique morphology characterized by nanometric cubes and improved electrical properties, as revealed by UTAS analysis. The observed results imply the potential of In2Se3 nanocube emitters for practical applications in vacuum nano-microelectronic devices.

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Section: Resultssupporting

confidence: 82%

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Dhongade

Mutadak

Deore

et al. 2020

ACS Appl. Nano Mater.

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“…These results confirm the formation of the Bi 2 Se 3 phase by the thermal V-S mechanism. Figure 4c displays the binding energies of the In 3d 5/2 and In 3d 3/2 orbitals, 444.7 and 452.3 eV, associated with the In-Se bond [50]. This finding reveals that In 3+ was doped into the Bi 2 Se 3 structure.…”

Section: Xps Analysismentioning

confidence: 85%

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

2021

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Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.

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“…Up to now, high-quality α-, β-, and γ-In 2 Se 3 films are prepared by vapor-phase growing method. In CVD, the growth temperature is varied for different substrates, and the growth temperature of α-In 2 Se 3 is higher than that of β- and γ-In 2 Se 3 ; Se and In 2 O 3 powders are commonly used as precursors. ,, The growth temperature of PVD is similar to that of CVD, but the precursor in PVD is usually In 2 Se 3 or InSe. ,,,,, Using magnetron sputtering, γ-In 2 Se 3 is usually prepared. ,− Using PLD, the preparation of α-, β- and γ-In 2 Se 3 films can be achieved. ,, However, PLD has relatively large impact and damage to the interface of films because of its high pulse energy, compared to MBE which uses thermally evaporated particles to grow. For MBE, the substrate surface, substrate temperature, and flux ratio of Se to In sources heavily affect the α-In 2 Se 3 formation.…”

Section: Strategies For the Preparation Of In2se3 Nanostructures And ...mentioning

confidence: 99%

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Niu

et al. 2021

ACS Nano

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Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.

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Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique

Cited by 28 publications

References 50 publications

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

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Growth and thermal properties of various In2Se3 nanostructures prepared by single step PVD technique

Cited by 28 publications

References 50 publications

In2Se3 Nanocubes as High Current Density Cold Cathode Materials

In2Se3 Nanocubes as High Current Density Cold Cathode Materials

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

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Product

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In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

In₂Se₃ Nanocubes as High Current Density Cold Cathode Materials

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications