Growth and thermoelectric properties of nitrogen-doped diamond/graphite

Haase, Armin; Peters, Alexandra E.; Rosiwal, Stefan

doi:10.1016/j.diamond.2015.10.023

Cited by 7 publications

(12 citation statements)

References 16 publications

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“…Hence, boron-doped diamond (BDD) has been widely used for electronic applications. Nitrogen, as an n-type dopant, has also frequently been studied during the last decades [44][45][46][47][48]. However, the deep donor level of nitrogen (1.7 eV below the conduction band) limits the usage of nitrogen-doped diamond as an effective n-type semiconductor.…”

Section: Substitutional Doping Of Diamondmentioning

confidence: 99%

The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces

Larsson

2020

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The combined effects of geometrical structure and chemical composition on the diamond surface electronic structures have been investigated in the present study by using high-level theoretical calculations. The effects of diamond surface planes [(111) vs. (100)], surface terminations (H, F, OH, Oontop, Obridge, vs. NH2), and substitutional doping (B, N vs. P), were of the largest interest to study. As a measure of different electronic structures, the bandgaps, work functions, and electron affinities have been used. In addition to the effects by the doping elements, the different diamond surface planes [(111) vs. (100)] were also observed to cause large differences in the electronic structures. With few exceptions, this was also the case for the surface termination species. For example, Oontop-termination was found to induce surface electron conductivities for all systems in the present study (except for a non-doped (100) surface). The other types of surface terminating species induced a reduction in bandgap values. The calculated bandgap ranges for the (111) surface were 3.4–5.7 (non-doping), and 0.9–5.3 (B-doping). For the (100) surface, the ranges were 0.9–5.3 (undoping) and 3.2–4.3 (B-doping). For almost all systems in the present investigation, it was found that photo-induced electron emission cannot take place. The only exception is the non-doped NH2-terminated diamond (111) surface, for which a direct photo-induced electron emission is possible.

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Section: Substitutional Doping Of Diamondmentioning

confidence: 99%

The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces

Larsson

2020

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“…Hydrogen gas was inducted into the solution to carry the volatiles into a quartz reaction chamber (marked as part 4 in Figure 1) containing a MgO ceramic plate (marked as part 7 in Figure 1) as the substrate for film deposition because MgO is fairly stable in hydrogen. Glass was not suitable to be used as the substrate because SiO 2 tends to form volatile gas SiH 4 . The size of the plate is 153 mm in length, 2 mm in thickness and 38 mm in width.…”

Section: Materials and Experimental Methodsmentioning

confidence: 99%

“…Another feature of CVD is that the structure of a deposited material changes with pre-patterned metal dot catalysts [3] and the CVD conditions. This is shown by depositing nitrogen doped diamond coatings on a graphite substrate followed by a peeling-off step to obtain free-standing films [4]. Methane, nitrogen, and hydrogen were inducted into a microwave plasma chemical vapor deposition reactor.…”

Section: Introductionmentioning

confidence: 99%

Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

et al. 2017

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Abstract:In this work, a Bi-Te-Ni-Fe complex coating material was obtained on magnesium oxide substrate by a single step ambient pressure chemical vapor deposition (CVD). Nickel acetate, bismuth acetate, iron (III) nitrate, and tellurium (IV) chloride dissolved in N,N-dimethylformamide (DMF) served as the metal sources for Ni, Bi, Fe, and Te, respectively. Hydrogen was used as the carrier gas. The substrate was kept at 500 • C in a quartz tube reaction chamber. The chemical vapor deposition time was two hours. Scanning electron microscopic observation revealed porous morphology of the deposited material with a needle-like submicron fine structure. These needle-like entities form networks with fairly uniform distribution on the substrate. Thermoelectric property test showed that the coating is p-type with a Seebeck coefficient of 179 µV/K. Time-dependent potential data were obtained to show the sensitivity of the Seebeck effect to temperature changes.

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“…Hence, boron-doped diamond (BDD) has been widely used for electronic applications. Nitrogen, as an n-type dopant, has also frequently been studied during the last decades [2][3][4][5]. However, the deep donor level of nitrogen (1.7 eV below the conduction band) limits the usage of nitrogen-doped diamond as an effective n-type semiconductor.…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

2019

ANN

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The combined effect of P-doping and surface-termination on the energetics, and especially the electronic structure, of a diamond (100) surface, has in the present study been investigated by using a Density Functional Theory method. The diamond surface was terminated with any of the following species: H, F, OH, Obridge and NH2 . These adsorbates have earlier experimentally been proven crucial for e.g. applications based on surface electrochemistry. The observed results were analysed with the purpose to obtain a deeper knowledge about the atomic-level cause to the observed effects by the P doping and surface termination. The P dopant was found to have a very minor influence on the averaged adsorption energy for the various terminating species (i.e. with less than 0.17 eV). Moreover, the adsorbates were found to reduce the stability of the P-dopant in the diamond lattice. When analysing the results of the calculated partial density of states, the P dopant was found to contribute with band gap states below the conduction band, out of which one is a donor band. In addition, the surfaces with their terminating species will contribute with empty band gap states just below the CBM of the diamond surfaces. Hence, the combination of P doping and surface termination will induce both donor and acceptor states in the diamond surface band gap, which will improve the usefulness of these specific diamond surfaces in various electronic devices. The work function of a diamond surface is one specific properties that will be affected by substitutional doping and surface termination. Within the present study, the terminating species were found to render a strong impact on the surface work function (as compared to a non-terminated diamond (100)-2x1 surface), with calculated work function values that were even further decreased by P-doping.

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Growth and thermoelectric properties of nitrogen-doped diamond/graphite

Cited by 7 publications

References 16 publications

The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces

The Combined Influence of Dopant Species and Surface Termination on the Electronic Properties of Diamond Surfaces

Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

A Theoretical Study of the Energetic Stability and Electronic Structure of Terminated and P-Doped Diamond (100)-2x1 Surfaces

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