2011
DOI: 10.1016/j.jallcom.2011.02.123
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Growth and transport properties of oriented bismuth telluride films

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Cited by 67 publications
(36 citation statements)
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“…4(a), indicating a metallic like behavior. This is similar to the Bi 2 Te 3 -based materials [12,13] and the (0 1 5)-oriented Bi 1.5 Sb 0.5 Te 3 film [see Fig. 4(a)].…”
supporting
confidence: 78%
“…4(a), indicating a metallic like behavior. This is similar to the Bi 2 Te 3 -based materials [12,13] and the (0 1 5)-oriented Bi 1.5 Sb 0.5 Te 3 film [see Fig. 4(a)].…”
supporting
confidence: 78%
“…15 This power factor is very large when comparing to a state-of-the-art thermoelectric material such as Bi 2 Te 3 or PbTe. 16,17 Moreover, ScN has been shown to have suitable mechanical and electrical properties. [18][19][20][21][22][23][24][25][26][27] We also reported effects on thermoelectric properties of ScN with small changes in the composition with the power factor changing one order of magnitude depending on, for example, oxygen, carbon, and fluorine content.…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, it is found that thin film configuration with well controlled crystal orientation can cater for the electrical transport of carriers along favorable direction and overcome this issue. In addition, thin films can promote the reduction of thermal conductivity by phonon scattering effect [6], and facilitates Micro-Electro-Mechanical System (MEMS) processing towards on-chip devices [7]. Epitaxial or c-axis oriented Ca 3 Co 4 O 9 thin films have been prepared by various techniques, such as radiofrequency (RF) sputtering [8], pulsed laser deposition (PLD) [9,10], atomic layer deposition (ALD) [11] and topotactic ion-exchange method [12].…”
Section: Introductionmentioning
confidence: 99%