Growth, annealing and thermo-electrical properties of Cd1−xZnxS thin films for microbolometers

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

“…This hexagonal Cd 1−x Zn x S ternary compound can also be used as a window material for the fabrication of p-n junctions [8]. Cd 1−x Zn x S thin films can be prepared by variety of techniques, such as electrodeposition, spray pyrolysis [9,[25][26][27], co-evaporation [10,28], dip deposition [11,29], solution growth [12,30] and co-precipitation [31]. However, only a few manuscripts on preparation Cd 1−x Zn x S thin film by chemical bath deposition [32,33] are available, despite being one of the most common methods used for the deposition of II-VI compound semiconductor thin films.…”

The electronic band parameters calculated by the Kronig–Penney method for Cd1−xZnxS quantum dot superlattices

“…For characterization experiences, on the other hand, many works have been reported on structural, optical and electrical properties of Cd 1−x Zn x S thin films [17,[23][24][25]. In addition, some reports have focused on the effect of annealing on the surface morphology and optical properties of these films [4,18,19,[26][27][28][29].…”

Studying the optical properties of tZnxCd1 – x S thin films prepared by chemical bath deposition (CBD) and the effect of annealing temperature.

“…In order to determine the optical band gap of zn x cd 1x s thin film, taking m , (αh‫)ט‬ was ploted versus ‫ט‬ using the data obtained from the optical absorption spectra , the direct band gap of the zn x cd 1-x s thin films was optained by extaploting the linear part of the zero of the ordinate. Atypical plot of(αh‫)ט‬ versus ‫ט‬ for Zn x Cd 1-x S thin films is shown in fig (2,7,8,9 ) .the band gap zn x cd 1-x s of the thin films was estimated to be ( 4.1 )eV . The value of extinction coefficient are calculated using the following relation (3).…”

“…Cadmium Zinc sulfide thin films have been widely used as a wide band-gap window material in hetro-junction solar cells and photconductive devices .In solar cell systems, where Cds films have been demonstrated to be effective, the replacement of Cds with the higher band gap ternary CdZns has led to a decrease in window absorption losses, and has resulted in an increase in the short circuit current in the solar cell [1] . Cd 1x Zn x s ternary compounds are promising materials for a veriety of optoelectronic device applications, such as electroluminescent, photoluminscent and photoconductor devices [2,5 ] . Cd 1x Zn x s in bulk form has a band gap tunability from 2.4 -3.7ev and hence can emit at different wavelength by varying the Cd content [6] .…”