Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

Si, Zhiwei; Liu, Zongliang; Hu, Yaoqiao; Zheng, Shunan; Dong, Xian-Zi; Gao, Xiaodong; Wang, Jianfeng; Xu, Ke

doi:10.1016/j.apsusc.2021.152073

Cited by 11 publications

(4 citation statements)

References 74 publications

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“…No significant shift of YGL was observed in the (101̅ 1) plane, probably due to the low concentration of impurities and the absence of a significant amount of close pairs in the sample. 58 It can be seen from Figure 2g,h) that at 10 K, the peak of NBE at point P1 is 3.472 eV, which is perfectly consistent with the stress-free value, 59,60 which proves that point P1 is almost stress-free. As the temperature increases, UVL (3.28 eV, 3.19 eV, 3.11 eV) is quenched, and the YGL/ NBE increases.…”

supporting

confidence: 71%

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Liu

et al. 2022

Nano Lett.

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Yellow-green luminescence (YGL) competes with nearbandgap emission (NBE) for carrier recombination channels, thereby reducing device efficiency; yet uncovering the origin of YGL remains a major challenge. In this paper, nearly stress-free and low dislocation density self-assembled GaN microdisks were synthesized by Na-flux method. The YGL of GaN microdisks highly depend on their polar facets. Variable accelerating voltage/power CL, variable temperature PL, and Raman spectroscopy are further performed to clarify the origin of polarity dependence of GaN microdisk YGL behavior, which indicates its independence of dislocations, surface effects, stress, crystalline quality, and gallium vacancies. It was found that the incorporation ability of carbon impurities in the polar (0001) facet is greater than that in the semipolar (101̅ 1) facets, producing higher content of C N or C N O N defects, resulting in a more pronounced YGL in the polar (0001) facet of GaN.

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confidence: 71%

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Liu

et al. 2022

Nano Lett.

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“…When the solubility of nitrogen in the Ga–Na melt exceeds the critical value of nitrogen required for the growth of GaN crystals, spontaneous nucleation of GaN is formed. Ga 3+ or N 3+ is transported down to the seed crystal to perform liquid phase epitaxy (LPE) growth on the seed crystal. , Therefore, the efficiency of nitrogen transfer directly affects the crystal growth quality and growth rate, so understanding the real mechanism of nitrogen transfer and controlling and optimizing its transfer effect are essential to obtain high-quality GaN crystals.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method

et al. 2023

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Improved nitrogen transport is crucial for enhancing the growth rate of GaN crystals using the Na-flux method. This study investigates the nitrogen transport mechanism during the growth of GaN crystals by the Na-flux method using a combination of numerical simulations and experiments. The results indicate that the temperature field affects the effect of nitrogen transfer, and we propose a novel bottom ring heating approach to optimize the temperature field and enhance nitrogen transfer during the growth of GaN crystals. The simulation results demonstrate that optimizing the temperature field improves nitrogen transfer by causing convection within the melt to float up from the crucible wall and sink at the crucible center. This enhancement improves the nitrogen transfer from the gas–liquid interface to the GaN crystal growth surface, thereby accelerating the growth rate of GaN crystals. Additionally, the simulation results indicate that the optimized temperature field substantially reduces polycrystalline generation at the crucible wall. These findings are also a realistic guide to the growth of other crystals in the liquid phase method.

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“…The flux and ammonothermal methods have relatively mild growth conditions and are the main methods of liquid phase growth. [25,26] These methods grow crystals under conditions close to thermodynamic equilibrium and eliminate the need for continuous gas supply during the growth process, providing a relatively stable growth environment, lower costs, and better environmental performance. The flux method increases the solubility of nitrogen by mixing flux into the Ga melt, allowing GaN to be grown at lower temperatures (such as 800 °C) and pressures (below 5 MPa).…”

Section: Introductionmentioning

confidence: 99%

Research Progress in Liquid Phase Growth of GaN Crystals

Sun,

Liu,

Wang

et al. 2024

Chemistry A European J

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As a wide band gap semiconductor, gallium nitride (GaN) has excellent structural stability and mechanical properties, giving it unique advantages in applications such as high frequency, high power, and high temperature. As a result, it has broad application prospects in optoelectronics and microelectronics. However, the lack of high‐quality, large‐size GaN crystal substrates severely limit the improvement of electronic device performance. To solve this problem, liquid phase growth of GaN has attracted much attention because it can produce higher quality GaN crystals compared to traditional vapor phase growth methods. This review introduces two main methods of liquid phase growth of GaN: the flux method and ammonothermal method, as well as their advantages and challenges. It reviews the research history and recent advances of these two methods, including the effects of different solvents and mineralizers on the growth quality and performance of GaN crystals, as well as various technical improvements. This review aims to outline the principles, characteristics, and development trends of liquid phase growth of GaN, to provide more inspiration for future research on liquid phase growth, and to achieve further breakthroughs in its development and commercial application.

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Growth behavior and stress distribution of bulk GaN grown by Na-flux with HVPE GaN seed under near-thermodynamic equilibrium

Cited by 11 publications

References 74 publications

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Yellow-Green Luminescence Due to Polarity-Dependent Incorporation of Carbon Impurities in Self-Assembled GaN Microdisk

Numerical Simulation of Temperature Field Optimization to Enhance Nitrogen Transfer in GaN Crystal Growth by the Na-Flux Method

Research Progress in Liquid Phase Growth of GaN Crystals

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