2008
DOI: 10.1088/0957-4484/19/22/225305
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Growth behavior near the ultimate resolution of nanometer-scale focused electron beam-induced deposition

Abstract: An attempt has been made to reach the ultimate spatial resolution for electron beam-induced deposition (EBID) using W(CO) 6 as a precursor. The smallest dots that have been written have an average diameter of 0.72 nm at full width at half maximum (FWHM). A study of the nucleation stage revealed that the growth is different for each dot, despite identical growth conditions. The center of mass of each dot is not exactly on the position irradiated by the e-beam but on a random spot close to the irradiated spot. A… Show more

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Cited by 47 publications
(65 citation statements)
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“…The choice of these three molecules was predicated on their widespread use by the EBID community as precursors, and our understanding of the purely electron stimulated decomposition process. 7,8,10,11,16,19,[21][22][23][24][25][26][27][28][29][30][31][32] In addition, our results can be compared and benchmarked against compositional data that already exist from previous EBID studies where deposition was accomplished under more typical conditions. Our experimental approach involved exposing nanometer thick films of parent precursor molecules to different electron fluences.…”
Section: Introductionmentioning
confidence: 99%
“…The choice of these three molecules was predicated on their widespread use by the EBID community as precursors, and our understanding of the purely electron stimulated decomposition process. 7,8,10,11,16,19,[21][22][23][24][25][26][27][28][29][30][31][32] In addition, our results can be compared and benchmarked against compositional data that already exist from previous EBID studies where deposition was accomplished under more typical conditions. Our experimental approach involved exposing nanometer thick films of parent precursor molecules to different electron fluences.…”
Section: Introductionmentioning
confidence: 99%
“…In this way, two-and three-dimensional nanoscale structures can be deposited at a resolution of Ï·1.0 nm. 4,5 Current applications of FEBIP include photolithographic mask repair and the production of high aspect ratio scanning probe tips. [6][7][8][9][10][11][12][13][14] Future applications may include the fabrication of nanoelectronic components.…”
Section: Introductionmentioning
confidence: 99%
“…With this approach and by applying low electron doses, extremely small deposits could be realized. [14][15][16][17] With electron beam induced surface activation (EBISA), we have recently introduced a FEBIP technique, where no FSE proximity effect occurs. 18,19 Figure 1 schematically depicts the ideal two step EBISA process: In the first step, the surface is irradiated and thereby locally activated with a focused electron beam; in the second step, it is exposed to the precursor iron pentacarbonyl, Fe(CO) 5 .…”
mentioning
confidence: 99%