Growth Behavior of Cubic Boron Nitride Films in a Two-Step Process: Changing Bias Voltage, Gas Composition, and Substrate Temperature

Zhang, W.J.; Matsumoto, Shinya; Li, Quan; Bello, I.; Lee, S.T.

doi:10.1002/1616-3028(20020418)12:4<250::aid-adfm250>3.0.co;2-l

Cited by 19 publications

(6 citation statements)

References 8 publications

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“…Faceted cBN films can be obtained using a two-step approach (i.e. reducing substrate bias voltage and increasing substrate temperature when switched from the nucleation to the growth process), as illustrated in figure 12 [155][156][157]. These cBN films were textured with their [0 0 1] orientation perpendicular to the film surface as revealed by pole-figure xray diffraction.…”

Section: Growth Of Cbn Via Chemical Routementioning

confidence: 99%

Nucleation, growth and characterization of cubic boron nitride (cBN) films

Zhang¹,

Chong²,

Bello³

et al. 2007

J. Phys. D: Appl. Phys.

120

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Cubic BN (cBN) has a set of extreme properties similar or even superior to diamond. The advance of science and technology of cBN has however been severely hampered by the poor quality of the material available (random orientation, limited film thickness, poor crystallinity and adhesion with substrates due to a non-cubic BN interlayer). This paper reviews the recent progress in the nucleation, growth and characterization techniques of cBN films. It describes various successful approaches in interface engineering and growth techniques in increasing film thickness, improving crystallinity and adhesion of cBN films to the substrate, which are the major issues hindering cBN films for both mechanical and electronic applications. Based on observations of the surface and interface structures, we further discuss the growth mechanisms of cBN films via physical and chemical routes.

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Section: Growth Of Cbn Via Chemical Routementioning

confidence: 99%

Nucleation, growth and characterization of cubic boron nitride (cBN) films

Zhang¹,

Chong²,

Bello³

et al. 2007

J. Phys. D: Appl. Phys.

120

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“…Boron nitride exists in different polytypes, the sp 2 bonded hexagonal and rhombohedral structures and the sp 3 cubic and wurzite phases. 1,2 Hexagonal and cubic BN are analogous to graphite and diamond, respectively. All phases are wide band-gap semiconductors ͑Ͼ5 eV͒.…”

Section: Introductionmentioning

confidence: 99%

Resonant Raman scattering in cubic and hexagonal boron nitride

et al. 2005

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We measured first-and second-order Raman scattering in cubic and hexagonal boron nitride using excitation energies in the visible and in the UV. The nonresonant first-order Raman susceptibilities for cubic and hexagonal BN are 1 and 10 Å 2 , respectively. Raman scattering is thus very powerful in detecting the hexagonal phase in mixed thin boron nitride films. In cubic BN the constant Raman sucseptibility in the visible and the UV is due to its indirect band gap. For hexagonal BN a Raman enhancement is found at 5.4 eV. It is well explained by the energy dependence of the dielectric function of hexagonal BN. The second-order spectrum of cubic boron nitride is in excellent agreement with first-principles calculations of the phonon density of states. In hexagonal BN the overbending of the LO phonon is Ϸ100 cm −1 , five times larger than in graphite.

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“…There have also been complex examples using mixtures of reactive carrier gases such as (e.g. Ar-N 2 -BF 3 -H 2 ) (Zhang et al 2002) 1.3.3 Adsorption of the precursor onto the hot substrate. The hot surface required for CVD is essential to overcome the energy barrier of reaction.…”

Section: Transport Delivering the Precursor Into The Reaction Chambermentioning

confidence: 45%