2006
DOI: 10.1143/jjap.45.9194
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Growth Behavior of Dy/Cr Multilayers during Molecular-Beam Epitaxy and Their Structures

Abstract: We studied the growth and structures of Dy/Cr multilayers on Cr buffer layers formed on MgO substrates using a molecular-beam epitaxy technique. Reflection high-energy electron diffraction and X-ray diffraction analyses reveal that the periodic structure can be formed for various combinations of Dy and Cr layer thicknesses. The first Dy layers grow epitaxially on the Cr buffer although they are not single crystals. However, the subsequent layers become amorphous or finely crystalline for smaller thicknesses an… Show more

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Cited by 3 publications
(3 citation statements)
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“…The details of the growth procedures and the RHEED and XRD characterizations are given elsewhere. 9,10) The dependences of the magnetization of the samples on magnetic field strength and temperature were measured using a superconducting quantum interference device (SQUID) magnetometer. A magnetic field was applied both parallel and perpendicular to the film plane.…”
Section: Methodsmentioning
confidence: 99%
“…The details of the growth procedures and the RHEED and XRD characterizations are given elsewhere. 9,10) The dependences of the magnetization of the samples on magnetic field strength and temperature were measured using a superconducting quantum interference device (SQUID) magnetometer. A magnetic field was applied both parallel and perpendicular to the film plane.…”
Section: Methodsmentioning
confidence: 99%
“…1, which may be equivalent to a metalorganic (MO) source in MOCVD but enhances safety by using water or alcohol solution of safe materials such as acetyl or acetylacetonato complexes of metals. Mist particles are sent to a deposition system designed to allow uniform films depending on substrate size, material, and temperature [1][2][3].…”
mentioning
confidence: 99%
“…An example of the deposition system configuration is displayed in Fig. 1 [1,2]. Let us consider the deposition of ZnO, which is a candidate of wide band gap semiconductor and transparent conductive oxide (TCO).…”
mentioning
confidence: 99%