Growth by molecular beam epitaxy and interfacial reactivity of MnSb on InP(001)

Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

“…Mn extends several tens of nm into the substrate, forming MnAs. This seems similar to endotaxial growth of MnSb previously observed on InP [24], GaP [29] and GaSb [30] …”

“…An explanation previously suggested for the formation of GaSb inclusions during MnSb/ GaAs(1 1 1) epitaxy is that surface preparation of the substrate by argon ion sputtering and annealing leaves metallic Ga nano-clusters which readily take up excess Sb during MnSb growth [16,24]. This does not seem to be applicable here: In Ga 0.5 0.5 Sb growth appears to to be suppressed by high Sb flux which is not what one would not expect if metal droplets were already present on the substrate surface.…”

“…After cleaning the samples were blown dry with nitrogen and loaded immediately into the MBE vacuum system. Once transferred into the preparation chamber all of the samples were cleaned by annealing at°4 25 C for 1 h, followed by argon ion bombardment for 8 min at 500 eV, and then annealing at°490 C for 1 h. Argon ion sputtering and annealing may produce both enhanced n-type doping near the In Ga 0.48 0.52 As surface [23] and metallic In/Ga clusters [16,24]. The possible effects of metal clusters on MnSb MBE growth will be discussed later, while electrical transport measurements will be reported in a future paper.…”

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

“…In this work we extend our MBE growth of MnSb from InP, 17 GaAs 18 and Ge 19 to relaxed In 0:5 Ga 0:5 As (111) virtual substrates. Furthermore, In 1Àx Ga x As structures are attractive for semiconductor spintronic applications thanks to their high electron mobility, high Land e g-factor and low Schottky barriers.…”

Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation

“…For example, while Mn pre-layers have been used in (non-MBE) growth of MnSb on GaAs [20], Mn deposition on to GaAs surfaces is known to lead to magnetic ordering and a change of reconstruction [21]. A second example is the growth of MnSb on GaAs versus InP or GaSb-sharp interfaces are readily formed on GaAs while on both of the latter substrates endotaxial growth occurs due to interdiffusion [22,23]. Recent work has highlighted the importance of the initial substrate reconstruction in the growth of both Fe on GaAs [24,25] and magnetic oxides on magnesia or alumina [26].…”