Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Goldstein, Leon J.; Glas, Frank; Marzin, J. Y.; Charasse, M. N.; Roux, G. Le

doi:10.1063/1.96342

Cited by 859 publications

(331 citation statements)

References 6 publications

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“…The energy position of the In peaks suggests the presence of a continuous film underlying the islands, this is in agreement with other literature results [9,10] which indicate that the InAs/GaAs system grows in the Stransky-Krastanov mode with a 1.7 ML thick film wetting the substrate. We tried to simulate the spectra by assuming the presence of a 1, 2 or 3 ML thick continuous film (the integer ML steps were chosen for computational ease) and we found that for all the samples a 2ML film at the interface best simulates the trailing edge of the spectra.…”

Section: Resultssupporting

confidence: 81%

Recent Developments of the RBS Technique for the Analysis of Semiconductor Nanostructures

Berti

Drigo

Torzo

1995

Microsc. Microanal. Microstruct.

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Abstract. 2014 It is well-known that in the case of high lattice mismatch the growth of semiconductor structures proceeds via island formation. The growth and characterization of the so obtained nanostructures has attracted increasing interest in the last few years due to their fascinating potential applications in integrated microelectronics. Apart from optical and electrical characterization, the structural analysis of these structures is usually performed by Scanning Electron Microscopy, Transmission Electron Microscopy or Atomic Force Microscopy. However, none of these techniques is suitable to exactly measure the total amount of deposited materials which is, together with the statistical distribution of the dimensions of the nanostructures, the most important information to be obtained. We have developed a new experimental set up for RBS analysis which, in connection with a computer simulation code, improves the thickness resolution of the technique of nearly one order of magnitude. With this experimental arrangement InAs/GaAs, InP/GaAs and InGaAs/GaAs nanostructures, nominally few monolayers (ML) thick can be analyzed by obtaining the total amount of deposited material, the fraction of the surface covered by the nanostructures and their maximum thickness.Microsc. Microanal. Microstruct. 6 (1995) Classification

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Section: Resultssupporting

confidence: 81%

Recent Developments of the RBS Technique for the Analysis of Semiconductor Nanostructures

Berti

Drigo

Torzo

1995

Microsc. Microanal. Microstruct.

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“…19 A means to adjust stratification without altering the starting composition or the deposition method would offer a huge efficiency gain over conventional fabrication technology. 6,[20][21][22] Our vision in the design of a switchable, stratified coating is to draw upon insights from our earlier work 23 to bring together two different materials technologies: colloidal stratification and pH-responsive particles. Here, we show how the stratification of binary particle blends can be switched off (or on) simply by raising (or lowering) the pH of the initial dispersion.…”

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confidence: 99%

pH-Switchable Stratification of Colloidal Coatings: Surfaces “On Demand”

Martín-Fabiani

Fortini

Haye

et al. 2016

ACS Appl. Mater. Interfaces

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Stratified coatings are used to provide properties at a surface, such as hardness or refractive index, which are different from underlying layers. Although time-savings are offered by self-assembly approaches, there have been no methods yet reported to offer stratification on demand. Here, we demonstrate a strategy to create self-assembled stratified coatings, which can be switched to homogenous structures when required. We use blends of large and small colloidal polymer particle dispersions in water that self-assemble during drying because of an osmotic pressure gradient that leads to a downward velocity of larger particles. Our confocal fluorescent microscopy images reveal a distinct surface layer created by the small particles. When the pH of the initial dispersion is raised, the hydrophilic shells of the small particles swell substantially, and the stratification is switched off. Brownian dynamics simulations explain the suppression of stratifi-cation when the small particles are swollen as a result of reduced particle mobility, a drop in the pressure gradient, and less time available before particle jamming. Our strategy paves the way for applications in antireflection films and pro-tective coatings in which the required surface composition can be achieved on demand, simply by adjusting the pH prior to deposition

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“…The fluctuation in the size of these self-organized quantum dots can be as small as 10%, and the InAs QD's are typically 10 nm in diameter and about 4 nm high depending on the growth conditions. 2,3 For ion-beam analysis experiments, the QD sample was placed in a three-axes goniometer with an angular resolution Ͻ0.005°. 4 Channeling experiments have been performed using 4-MeV He ϩ ions from the 2-30-MeV AVF Cyclotron at the Eindhoven University of Technology.…”

Section: Methodsmentioning

confidence: 99%

Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments

et al. 2000

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Strain in and around pyramidal InAs/GaAs quantum dots ͑QD's͒ fabricated by molecular-beam-epitaxy influences the density of states of the confined charge carriers. The presence of strain in QD's is required to explain their optical properties. In this paper MeV ion-channeling experiments are presented which provide evidence for the presence of strain in and around InAs QD's in GaAs. The small dimensions of the QD's ͑typical height 4 nm͒ and the presence of a wetting layer complicate the interpretation of channeling measurements, but our experiments show that extended strain fields around the QD's induce ion steering which accounts for the observed channeling behavior.

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Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Cited by 859 publications

References 6 publications

Recent Developments of the RBS Technique for the Analysis of Semiconductor Nanostructures

Recent Developments of the RBS Technique for the Analysis of Semiconductor Nanostructures

pH-Switchable Stratification of Colloidal Coatings: Surfaces “On Demand”

Evidence for strain in and around InAs quantum dots in GaAs from ion-channeling experiments

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