2011
DOI: 10.1016/j.jcrysgro.2011.01.077
|View full text |Cite
|
Sign up to set email alerts
|

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
10
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
6
1
1

Relationship

0
8

Authors

Journals

citations
Cited by 24 publications
(12 citation statements)
references
References 10 publications
0
10
0
Order By: Relevance
“…For a NaF thickness higher than 20 nm contradictory reports appear: cell degradation; peeling off of the CIGSe layer during the chemical bath deposition of CdS; or no effects. This approach has been used in several CIGSe growth processes: the traditional three-stage [8,121], low temperature co-evaporation processes [118,119], in-line co-evaporation processes [16,122,123], rapid thermal annealing [124] and both on flat and flexible substrates like steel [125] and polyimides [126,127]. For CZTSSe the same thickness range has been reported [78,80] but no detailed studies about the effects of thick or thin layers are yet known.…”
Section: Naf As a Precursormentioning
confidence: 99%
“…For a NaF thickness higher than 20 nm contradictory reports appear: cell degradation; peeling off of the CIGSe layer during the chemical bath deposition of CdS; or no effects. This approach has been used in several CIGSe growth processes: the traditional three-stage [8,121], low temperature co-evaporation processes [118,119], in-line co-evaporation processes [16,122,123], rapid thermal annealing [124] and both on flat and flexible substrates like steel [125] and polyimides [126,127]. For CZTSSe the same thickness range has been reported [78,80] but no detailed studies about the effects of thick or thin layers are yet known.…”
Section: Naf As a Precursormentioning
confidence: 99%
“…However, several studies have showed that the AM may not only act as dopants but also form secondary phases in the absorber layer [4,11] . For example, some Na-Cu-(In,Ga)-Se secondary phases have been detected in the CIGS layer [11][12][13] .…”
Section: Introductionmentioning
confidence: 99%
“…However, several studies have showed that the AM may not only act as dopants but also form secondary phases in the absorber layer [4,11] . For example, some Na-Cu-(In,Ga)-Se secondary phases have been detected in the CIGS layer [11][12][13] . As we know, Na is prone to segregate not only on the surface but also on the grain boundary during the processing [9,12,[14][15][16][17] , and it is highly possible some Na-Cu-Ga-Se and Na-Cu-(In,Ga)-Se phases exist in the Na-rich regions [18] .…”
Section: Introductionmentioning
confidence: 99%
“…KIST01, as shown in Figure (d). There are still some debatable issues regarding the effects of Na on structural properties . The presence of Na induces an increase in grain size and crystal quality, as observed by Bodeg et al However, Rudmann et al observed a decrease in grain size when the NaF precursor is introduced in the deposition process .…”
Section: Resultsmentioning
confidence: 99%