Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy

Kim, J.S.; Lee, Y.H.; Chang, Kee-Joo

doi:10.1016/j.jcrysgro.2004.12.025

Cited by 1 publication

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References 11 publications

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“…As for device fabrication the quality of the doped films is of high importance; there was no surprise that we found ͑among the cited theoretical studies͒ three who report the same substrate temperature of 600°C. 15,17,18 However, the first criterion for choosing a doping temperature is still the concentration and the mobility of the extrinsic carriers in the doped semiconductor. But the strong focus on the crystal quality hints at the fact that the carrier concentration and mobility should not vary much if the substrate temperature is above 340°C, which should confirm our calculations.…”

Section: The P-type Doping Of Gaas With Bementioning

confidence: 99%

A universal theoretical approach for examining the efficiency of doping processes in semiconductors

Gavaza

2009

Journal of Applied Physics

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The efficiency of doping crystalline semiconductors is often associated with the solubility of the dopant. However, the scope of doping is usually a high density of extrinsic carriers, which is not necessarily guaranteed by a high solubility of the dopant but by the high concentrations of a certain type of defects. We present a universal approach to relate the concentrations of defects resulting in extrinsic carriers in crystalline semiconductors as a function of the doping process experimental parameters. Based on quantum multiple scattering, our method features two main theoretical novelties: the transition operators are calculated by iteratively “switching on” the interaction potentials and the temperature effects are introduced as semiclassical vibrations. The bulk and doped configurations are characterized by their ground state electronic structures obtained from first-principles calculations. The dependency on substrate temperature of the carrier concentration calculated with our method is shown to reproduce well the experimental results not only for well-known processes (the n-type doping of ZnO with Al and the p-type doping of GaAs with Be) but also for challenging processes such as the p-type doping of ZnO with P. This proves that our approach is reliable and that it can become a powerful tool in the search for optimal growth condition.

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Section: The P-type Doping Of Gaas With Bementioning

confidence: 99%

A universal theoretical approach for examining the efficiency of doping processes in semiconductors

Gavaza

2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy

Cited by 1 publication

References 11 publications

A universal theoretical approach for examining the efficiency of doping processes in semiconductors

A universal theoretical approach for examining the efficiency of doping processes in semiconductors

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