Here, we report the effect of europium (Eu) doping in Bi 2 Se 3 topological insulator (TI) by using different characterization techniques viz. X-ray diffraction (XRD), scanning electron microscopy (SEM) coupled with energy dispersive X-ray analysis (EDXA) and magneto-transport measurements. Good quality Eu doped Bi 2 Se 3 (Eu 0.1 Bi 1.9 Se 3 ) single crystal is grown by the self flux method through the solid state reaction route. Single crystal XRD pattern displayed the high crystalline quality of the Eu 0.1 Bi 1.9 Se 3 sample along (00l) alignment whereas; the powder XRD confirmed the rhombohedral crystal structure without any impurity phases. SEM images exhibited a layered slab like structure stacked one over the other whereas; EDXA measurements confirmed the chemical composition of Eu 0.1 Bi 1.9 Se 3 sample. Further, the EDXA mapping showed the homogeneous distribution of Bi, Se and Eu elements. Temperature dependent electrical resistivity curves revealed a metallic behaviour both in the presence and absence of applied magnetic field. Magneto-transport measurements showed a decrease in the magneto-resistance (MR) value of the Eu 0.1 Bi 1.9 Se 3 sample (~32% at 5K) in comparison to the pure Bi 2 Se 3 sample (~80% at 5K). For, Eu 0.1 Bi 1.9 Se 3 sample, a complex crossover between WL and WAL phenomenon was observed at lower applied magnetic fields, whereas the same was absent in case of the pristine one. Further, HLN (Hikami Larkin Nagaoka) fitted magneto-conductivity (MC) analysis revealed a competing weak anti localization (WAL) and weak localization (WL) behaviour. Summarily, in the present work we study the structural, surface morphology and magneto-transport properties of as grown Eu 0.1 Bi 1.9 Se 3 single crystals.