Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Agustsson, J. S.; Arnalds, Unnar B.; Ingason, Arni Sigurdur; Gylfason, Kristinn B.; Johnsen, Kristinn; Ólafsson, S.; Guðmundsson, Jón Tómas

doi:10.1016/j.apsusc.2008.05.335

Cited by 33 publications

(11 citation statements)

References 19 publications

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“…Although the NiO layer does not significantly affect the Pt resistivity, the high crystalline quality of the NiO and Pt films deposited on Al 2 O 3 leads to a lower resistivity than the Si-based substrates. These resistivities are comparable to those obtained for Pt using similar fabrication methods and deposition conditions [46][47][48].…”

Section: Device Fabrication and Experimental Setupsupporting

confidence: 81%

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Jacot

Krishnaswamy

Sala

et al. 2020

Journal of Applied Physics

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Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely Si/SiO 2 , Si/Si 3 N 4 , and Al 2 O 3. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally-activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Further, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.

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Section: Device Fabrication and Experimental Setupsupporting

confidence: 81%

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Jacot

Krishnaswamy

Sala

et al. 2020

Journal of Applied Physics

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“…These observed resistivities of thin-film electrodes are comparable with previously [42,43], and indicate that the SRO and LNO layers in this study can be a good lattice matched metallic electrode for ferroelectric PZT oxide thin films. Finally we mention for reference that Pt thin film electrodes on Si substrates were found to have a room temperature resistivity in the range 0.18-0.21 mV cm [44,45], thus a factor 10 lower than the oxide electrode layers. Fig.…”

Section: Methodsmentioning

confidence: 98%

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 thin films on all-oxide layers buffered silicon

Nguyen

Houwman

et al. 2015

Materials Research Bulletin

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“…Another category of in situ and real-time diagnostics is based on measuring the change of electrical and optical properties of the deposited layer as a function of time. Evolution of electrical properties (e.g., film resistivity) can be measured using four-point probe techniques [ 44 , 45 , 46 , 47 ], while typical optical diagnostics include reflectance spectroscopy [ 48 , 49 , 50 , 51 ] and spectroscopic ellipsometry [ 52 , 53 , 54 , 55 , 56 , 57 , 58 , 59 , 60 ]. These techniques can characterize all relevant film-growth stages up to the formation of a continuous layer and beyond, while they provide morphological information over mesoscopic length scales.…”

Section: Introductionmentioning

confidence: 99%

In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools

et al. 2020

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Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms of, e.g., layer surface smoothness or electrical properties. In this work, we review the combined use of in situ and real-time optical (wafer curvature, spectroscopic ellipsometry) and electrical probes for gaining insights into the early growth stages of magnetron-sputter-deposited films. Data are reported for a large variety of metals characterized by different atomic mobilities and interface reactivities. For fcc noble-metal films (Ag, Cu, Pd) exhibiting a pronounced three-dimensional growth on weakly-interacting substrates (SiO2, amorphous carbon (a-C)), wafer curvature, spectroscopic ellipsometry, and resistivity techniques are shown to be complementary in studying the morphological evolution of discontinuous layers, and determining the percolation threshold and the onset of continuous film formation. The influence of growth kinetics (in terms of intrinsic atomic mobility, substrate temperature, deposition rate, deposition flux temporal profile) and the effect of deposited energy (through changes in working pressure or bias voltage) on the various morphological transition thicknesses is critically examined. For bcc transition metals, like Fe and Mo deposited on a-Si, in situ and real-time growth monitoring data exhibit transient features at a critical layer thickness of ~2 nm, which is a fingerprint of an interface-mediated crystalline-to-amorphous phase transition, while such behavior is not observed for Ta films that crystallize into their metastable tetragonal β-Ta allotropic phase. The potential of optical and electrical diagnostic tools is also explored to reveal complex interfacial reactions and their effect on growth of Pd films on a-Si or a-Ge interlayers. For all case studies presented in the article, in situ data are complemented with and benchmarked against ex situ structural and morphological analyses.

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Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Cited by 33 publications

References 19 publications

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr 0.52 Ti 0.48 )O 3 thin films on all-oxide layers buffered silicon

In Situ and Real-Time Nanoscale Monitoring of Ultra-Thin Metal Film Growth Using Optical and Electrical Diagnostic Tools

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