Binary two-dimensional (2D) materials
comprising main group elements
with several phases of AB and AB2 stoichiometry provide
significantly rich physics and application potentials. We present
the epitaxial growth of two phases of atomically thin SnSb on a Cu2Sb surface alloy under ultrahigh-vacuum (UHV) conditions.
Theoretical studies predict that these 2D SnSb sheets adopt the atomic
configurations similar to those of black and blue phosphorene but
with Sb–Sn–Sn–Sb motif (R- and H-phases) holding
an indirect band gap of 0.20 and 0.85 eV, respectively. Our low-temperature
(77 K) scanning tunneling microscopy characterizations, and first-principles
theoretical calculations, reveal the atomic structures and semiconducting
properties of the most stable H-phase, displaying a commensurate lattice
growth mode on Cu2Sb(111) but a weak interfacial interaction.
Strain-engineered band gap, effective mass, and Young’s Modulus
of the most stable H-phase are further explored theoretically. These
results suggest that 2D SnSb with intriguing properties has great
potential for electronics in an atomically thin platform.