“…Growth of the diagonals is computed by integration over time of a growth kinetic law that is either related to experimental measurements or to theories. For instance, in case of dendritic microstructures [44], a dendrite tip growth kinetic model is well established and could be fitted by a simple power law between the velocity along the h10i directions, v h 10 i n (v h 100 i n along h100i directions in 3D), and the tip undercooling [44], DT, the latter defined by the difference between the melting point of the material, T M , and the tip temperature, T. For silicon growth [45], a linear law is appropriate. Experimental observations, within the spatial resolution of the set-up, also show that the rough part of the solidification front growing directionally remains smooth, grooves solely locally destabilizing the s/l interface due to the presence of {111} facets [42].…”