Growth dynamics and photoresponse of the Wadsley phase V₆O₁₃ crystals

Abstract

The mechanism and dynamics of V6O13 crystal growth were systematically studied. The photoresponse performance of V6O13 optoelectronic devices from visible light to long-wave infrared region was studied, and the photoresponse mechanism was discussed.

High performance of a broadband room-temperature Si detector beyond the cut-off wavelength

“…1d exhibits the response time of the Si detector with the 3D MSM structure at 1550 nm. The rise and fall time at 1550 nm are 300 ms and 234 ms, respectively, faster than the response times of most thermal detectors on the order of ms. 15 The Si detector has good stability under continuous illumination at 1550 nm (ESI S4, †) and temperature fluctuations at room temperature do not affect the detector performance significantly (ESI S5, †).…”

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect

“…In recent years, Wadsley phase vanadium oxide has attracted attention because of its quasi-layered structure, whose properties could be tuned as 2D layered materials. − B phase VO 2 is a typical Wadsley phase vanadium oxide that shows a zero band gap suitable for broad-band photodetection at room temperature. In comparison with VO x , whose TCR is affected by vacancies, VO 2 (B) has better performance at room temperature, such as no obvious phase transition, no hysteresis, low 1/ f noise, suitable resistance, and high TCR. ,, Lee et al showed that the VO 2 (B) microbolometer can operate up to 100 °C with a detectivity of around 1.45 × 10 8 cm Hz 1/2 W –1 (Jones).…”