Growth dynamics controllable deposition of homoepitaxial MgO films on the IBAD-MgO substrates

Wang, Wei; Liu, Linfei; Yao, Yanjie; Lu, Saidan; Wu, Xiang; Zheng, Tong; Liu, Shunfan; Li, Yijie

doi:10.1016/j.apsusc.2017.11.091

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…Ion source assisted deposition has the potential to produce high-quality ITO films at low substrate temperatures. Ion sources are plasma generation devices that enable ion beams to interact with the materials at the atomic level as they are deposited to effectively produce dense films with tunable morphology and superior stability [3][4][5]. Two major types of ion sources have been widely used for surface treatmentfilament and racetrack (anode layer) types [6].…”

Section: Introductionmentioning

confidence: 99%

Single-beam ion source enhanced growth of transparent conductive thin films

Tran¹,

Kim²,

Baule³

et al. 2022

J. Phys. D: Appl. Phys.

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A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a ‘soft sputtering mode’, which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. The ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

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Section: Introductionmentioning

confidence: 99%

Single-beam ion source enhanced growth of transparent conductive thin films

Tran¹,

Kim²,

Baule³

et al. 2022

J. Phys. D: Appl. Phys.

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“…Ion sources are plasma generation devices that enable ion beams to interact with the materials at the atomic level as they are deposited to effectively modulate the film microstructure [21][22][23][24][25]. In the ion-source-enhanced growth of a-C:H, the ion source produces plasma from hydrocarbon gas, such as methane.…”

Section: Introductionmentioning

confidence: 99%

Growth of Highly Transparent Amorphous Carbon Films Using Beam Plasma Source

Kim

Baule

Shrestha³

et al. 2022

Coatings

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A single beam plasma source was used to deposit hydrogenated amorphous carbon (a-C:H) coatings at room temperature. Using methane source gas, a-C:H coatings were deposited at different radio frequency (RF) power to fabricate transparent and durable coatings. The film deposition rate was almost linearly proportional to the ion source power. Hydrogenated amorphous carbon films of ~100 nm thickness appeared to be highly transparent from UV to the infrared range with a transmittance of ~90% and optical bandgap of ~3.7 eV. The coatings also possess desirable mechanical properties with Young’s modulus of ~78 GPa and density of ~1.9 g/cm3. The combined material properties of high transmittance and high durability make the ion-source-deposited a-C:H coatings attractive for many applications.

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Single-beam plasma source deposition of carbon thin films

Kim

Baule

Shrestha³

et al. 2022

Review of Scientific Instruments

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A single-beam plasma source was developed and used to deposit hydrogenated amorphous carbon ( a-C:H) thin films at room temperature. The plasma source was excited by a combined radio frequency and direct current power, which resulted in tunable ion energy over a wide range. The plasma source could effectively dissociate the source hydrocarbon gas and simultaneously emit an ion beam to interact with the deposited film. Using this plasma source and a mixture of argon and C2H2 gas, a-C:H films were deposited at a rate of ∼26 nm/min. The resulting a-C:H film of 1.2 µm thick was still highly transparent with a transmittance of over 90% in the infrared range and an optical bandgap of 2.04 eV. Young’s modulus of the a-C:H film was ∼80 GPa. The combination of the low-temperature high-rate deposition of transparent a-C:H films with moderately high Young’s modulus makes the single-beam plasma source attractive for many coatings applications, especially in which heat-sensitive and soft materials are involved. The single-beam plasma source can be configured into a linear structure, which could be used for large-area coatings.

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Growth dynamics controllable deposition of homoepitaxial MgO films on the IBAD-MgO substrates

Cited by 3 publications

References 29 publications

Single-beam ion source enhanced growth of transparent conductive thin films

Single-beam ion source enhanced growth of transparent conductive thin films

Growth of Highly Transparent Amorphous Carbon Films Using Beam Plasma Source

Single-beam plasma source deposition of carbon thin films

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