Growth, electrical rectification, and gate control in axial <i>in situ</i> doped p-n junction germanium nanowires

Le, Son T.; Jannaty, P.; Zaslavsky, Alexander; Dayeh, Shadi A.; Picraux, S. T.

doi:10.1063/1.3457862

Cited by 23 publications

(17 citation statements)

References 25 publications

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“…In fact, we typically observed linear I–V characteristics from the segments close to the ends of the nanowires (away from p–n junctions). By measuring the gate responses of the non‐rectifying segments,14 we identified the doping types (either p or n) of individual segments13, 15 (see Supporting Information). This electrical characterization, along with the correlated spatial behavior, strongly confirms that the current rectification originates from the intrinsic p–n junction properties of the nanowires…”

mentioning

confidence: 99%

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

et al. 2011

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The minority carrier lifetimes of VLS‐grown axial p–n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire‐diameter‐dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications.

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confidence: 99%

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

et al. 2011

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“…Nanowires (NWs) with built‐in p–n junctions along the axial direction have been obtained by Tutuc et al 1 via the growth of an n‐type Ge NW followed by an intrinsic segment after which a p‐type shell was grown all around the intrinsic and n‐type segments. Similar axial p–n junctions in Ge NWs were grown by Son et al 2 while tandem p–n junction NWs have been demonstrated by Kempa et al 3. On the other hand core–shell p–i–n junction Si NWs have been grown by Tian et al 4 which involves extra processing for the fabrication of separate contacts to the n‐ and p‐type segments.…”

Section: Introductionmentioning

confidence: 71%

Properties and tailoring of the ubiquitous core–shell p–n junction in semiconductor nanowires by δ‐doping

Zervos

2013

Physica Rapid Research Ltrs

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The properties of the core–shell p–n junction in GaAs nanowires have been investigated via the self‐consistent solution of the Poisson–Schrödinger equations in cylindrical coordinates and the effective mass approximation for doping levels between 1017–1019 cm–3 and radii ≤100 nm at 300 K. Only electrons or holes are confined in the n‐ or p‐type core for equal core–shell thicknesses and doping levels but the shell is depleted even when a flat‐band condition exists at the surface for equal core–shell volumes. In contrast, a δ‐doped n–i–n–i–p–i junction has a balanced charge distribution and flat‐band potential in the core and shell which is critical for the realization of high performance nanowire devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Although alloys may have formed at the device interface, SEM-EDX elemental mapping of the devices confirmed that there was no detectable metal diffusion from the contacts into the semiconductor channel during fabrication (Figure S27). 73…”

Section: Resultsmentioning

confidence: 99%

Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

Biacchi

Alberding

et al. 2018

ACS Nano

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Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made towards the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it remains a substantial challenge to fully characterize the products’ inherent electronic transport properties. This is often due to their irregular morphology or small dimensions, which demand the formation of colloidal assemblies or films as a prerequisite to performing electrical measurements. Here, we report the synthesis of nearly monodisperse 2D colloidal nanocrystals of semiconductor SnS and a thorough investigation of the intrinsic electronic transport properties of single crystals. We utilize a combination of multi-point contact probe measurements and ultrafast terahertz spectroscopy to determine the carrier concentration, carrier mobility, conductivity/resistivity, and majority carrier type of individual colloidal semiconductor nanocrystals. Employing this metrological approach, we compare the electronic properties extracted for distinct morphologies of 2D SnS and relate them to literature values. Our results indicate that the electronic transport of colloidal semiconductors may be tuned through prudent selection of the synthetic conditions. We find that these properties compare favorably to SnS grown using vapor deposition techniques, illustrating that colloidal solution synthesis is a promising route to scalable production of nanoscale 2D materials.

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Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Cited by 23 publications

References 25 publications

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

Minority Carrier Lifetimes and Surface Effects in VLS‐Grown Axial p–n Junction Silicon Nanowires

Properties and tailoring of the ubiquitous core–shell p–n junction in semiconductor nanowires by δ‐doping

Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

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