2019
DOI: 10.1016/j.spmi.2019.01.024
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Growth improved of CIGS thin films by applying mechanical perturbations to the working electrode during the electrodeposition process

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Cited by 9 publications
(6 citation statements)
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“…Thermal annealing is typically applied after deposition to improve the deposited layer crystal structure, to decrease the recombination of defects, and to obtain a uniform atomic ratio [ 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ]. The post treatment parameters depend on the thin film composition, its thickness, the partial vapor pressure, and on the binary stacked layers [ 51 ].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thermal annealing is typically applied after deposition to improve the deposited layer crystal structure, to decrease the recombination of defects, and to obtain a uniform atomic ratio [ 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ]. The post treatment parameters depend on the thin film composition, its thickness, the partial vapor pressure, and on the binary stacked layers [ 51 ].…”
Section: Resultsmentioning
confidence: 99%
“…The CIGS system has been studied mostly using potential sweep methods to characterize the electrochemical reduction reactions of the four components [ 19 , 39 , 40 , 41 ]. Recently, the electrodeposition of CIGS on a rotating disk electrode (RDE) has been studied by two methods: DC electrodeposition and DC electrodeposition plus mechanical perturbations [ 42 ]. Furthermore, some studies have been done on a RDE on the copper-indium-selenium (CIS) system [ 43 , 44 ].…”
Section: Introductionmentioning
confidence: 99%
“…Integrating electrophoretic [169] or chemical bath deposition [170] into the electrodeposition process may provide more flexibility in adjusting the film composition and, likely, may else lead to films with a more uniform morphology. Adding mechanical perturbations to the working electrode during the electrodeposition has also reported the capability in improving the film's morphology [171].…”
Section: Discussionmentioning
confidence: 99%
“…219 Electrodeposited CIGS solar cells employing a layer of elements or binary compounds also have been reported recently, exhibiting PCE of 14.17%, 218 and even could reach 15.4% using one-step electrodeposition of Cu, In, Ga, and Se followed by a layer of In, Ga, and Se by evaporation. 220,221 However, the lack of stability reports using this method will limit their progress.…”
Section: Deposition Methods and Development Of Cuch Thin-filmsmentioning
confidence: 99%