Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Abstract

Purpose-The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al 2 O 3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al 2 O 3 and Ge for HCl-and HF-last Ge surface. Design/methodology/approach-After wet chemical cleaning with HCl or HF, Al 2 O 3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings-It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-and HCl-last starting surface. Originality/value-The novelty of this work is to investigate the starting surface of Ge to IL growth between Al 2 O 3 /Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

“…This allows the sputtering material to enter the deep positon of the cellulose substrate easily. Compared with literature [37,38], the “appearance deposition rate” for the deposition layer was higher here, at a rate of about 0.90 μm/min. It was found that the wide range of blending area for the Al 2 O 3 and cellulose material contributed a lot to the “appearance thickness” and “appearance deposition rate”.…”

Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge)/Aluminium Oxide (Al2O3)

“…In our previous study, we have shown that the Chlorine (Cl) termination after HCl treatment on Ge surface was confirmed by Cl2p spectra of XPS measurement and this can prevent slightly the intermixing between Ge and Al 2 O 3 after PDA of 400°C (Sahari et al 2017b(Sahari et al , 2017a. In this study, we continue the study by investigating on the effect of Cl-termination by increasing the temperature up to 600°C.…”