Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminium-induced crystallization

Mixed-phase solidification of thin Si films on SiO2

“…In addition to partially and selectively melting away those parts of the material that are structurally-defective/energetically-costly, as has been explained above, this outcome further requires that the formation of defects be avoided during the ensuing lateral solidification process. Although it is possible for one to enumerate a number of factors encountered during multi-MPS that can be recognized as being conducive to defect-free solidification (e.g., relatively slow solidification rates resulting from relatively small degrees of interfacial undercooling, stable interfaces with mostly positive curvatures expected during the growth (i.e., the absence of re-entrant corners and cusps), relatively short lateral growth distances, the (1 0 0)-surface orientation being often associated with relatively defect-free growth in both melt-mediated and solid-phase crystallization of Si films [8,19,20], the highly unusual ''inverted'' interface thermal profile [4] etc. ), a definitive understanding of the above observations remains to be elucidated.…”

Effect of electric bias on the deposition behavior of silicon on flexible polyethylene terephthalate (PET) during hot-wire chemical vapor deposition

“…The mobility of polycrystalline silicon thin film was reported to be $210 cm 2 /V s [4], whereas that of hydrogenated amorphous silicon thin film was reported to be $1.3 cm 2 /V s [5]. Efforts to produce high-mobility polycrystalline silicon films on a low-cost glass substrate have been made extensively using such as excimer laser annealing [6,7], solid phase crystallization (SPC) [8], rapid thermal processing (RTP) [9], and metal induced lateral crystallization (MILC) [10]. However, these methods suffer from complex processing, which increases the production cost.…”

Crystalline Silicon Thin Film Solar Cells

“…(Pihan et al, 2007). Finally, a crystalline silicon layer rests on the glass and is covered by an aluminium layer, which may contain silicon islands.…”

“…The Section divides in the propagation of already present phase boundaries and in nucleation, including non-stationary nucleation. Kinetics of aluminum induced crystallization has already been reviewed (Pihan et al, 2007) and is not treated in the following. The facts presented in this section are the background for any successful crystallization of amorphous silicon, in the furnace or by laser irradiation.…”