Growth kinetics of AlOHC defects in γ-irradiated silica glasses

Lagomacini, Juan C.; Bravo, D.; Martin, A.; López, Fernando; Martin, P.; Ibarra, Á.

doi:10.1016/j.jnoncrysol.2014.04.005

Cited by 22 publications

(11 citation statements)

References 44 publications

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“…In the same spectrum, we also detected the presence of the E'Si (a three coordinated Si atom having an unpaired electron, À À À À À À Si • ) [11,13,14] located at %3458 Gauss. The signal of the NBOHC (Non Bridging Oxygen Hole Center, À À À À À À Si-O • ), [9,11,13,15] if present, is not sufficiently intense in comparison with that of the Al-OHC to be clearly distinguished in our spectra. The signal of the Peroxy Radical (POR, À À À À À À Si─O─O • ), [9,11] if present, represents a minor contribution to the EPR signal too.…”

Section: Resultsmentioning

confidence: 79%

“…The signal of the NBOHC (Non Bridging Oxygen Hole Center, Si–O • ), if present, is not sufficiently intense in comparison with that of the Al–OHC to be clearly distinguished in our spectra. The signal of the Peroxy Radical (POR, SiOO • ), if present, represents a minor contribution to the EPR signal too. The defect growth kinetic in Figure has been evaluated by the peak‐to‐peak intensities of the EPR signal at ≈3440 Gauss and by the one of the peak at ≈3448 Gauss both attributable to the Al–OHC.…”

Section: Resultsmentioning

confidence: 96%

“…Since both the Al–OHC and the E'Al are paramagnetic centers, their radiation induced generation can be also studied using electron paramagnetic resonance (EPR) measurements. In a previous study, it was proposed that in natural silica, the Al–OHCs are generated by two processes. In the faster one the Al–OHC precursor has a hydrogen atom as charge compensator, whereas in the slower one the charge compensator is an alkaline element.…”

Section: Introductionmentioning

confidence: 99%

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Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Alessi

Guttilla

Girard

et al. 2018

Physica Status Solidi (a)

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Online X‐ray radiation induced attenuation (RIA) has been performed in aluminosilicate optical fibers having different Al concentrations. The studied UV‐visible spectral range revealed the presence of absorption bands related to Al defects. Their generation is shown to be not noticeably dependent on the dose rate. Furthermore, the Al content (2–4 wt%), the core sizes, and the manufacturing processes (SPCVD or MCVD) of the preforms have no significant influence on the RIA levels and kinetics, as well as the drawing parameters within the range used for specialty fiber production. The Aluminum–Oxygen Hole Center (Al–OHC) presence was proved by their 2.3 eV absorption band and by their electron paramagnetic resonance (EPR) signature. The growth kinetic of their concentration versus dose is linear up to 2–3 kGy (SiO2). While, at higher doses, EPR data highlight a saturation, suggesting that the Al–OHC generation results from a process involving precursors. To explain the E'Si growth kinetic with the dose, two processes are necessary, the first is from precursors and the second by breaking SiOSi links. The study of the RIA induced in the NIR demonstrates that the tail of the 2.3 eV Al–OHC band cannot explain the fiber degradation and that additional defects contribute to the induced losses.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Alessi

Guttilla

Girard

et al. 2018

Physica Status Solidi (a)

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“…6 and are also listed in Table 2. According to the literature [33][34][35][36][37][38], the ESR signals at g = 2.0015 clearly observed at both room temperature and 77 K can be assigned to the defect centers of SiE'( Si • ≡ , g = 2.0018) and GeE' ( Ge • ≡ , g = 2.0011) or nonbridging oxygen hole center (NBOHC, Si O • ≡ − or Ge O • ≡ − , g = 2.0010) in a little g-value excursion range with experimental error. These results are also in consistent with our previous work [38].…”

Section: Resultsmentioning

confidence: 99%

Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition

Wen¹,

Liu²,

Dong³

et al. 2015

Opt. Express

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The radiation-induced photoluminescence (PL) properties of Bi/Al-codoped silica optical fibers were investigated. The Bi/Al-related materials were doped into fiber core via atomic layer deposition. The pristine fiber samples were irradiated with different doses, and its absorption and PL properties were studied. A new absorption peak appeared at approximately 580 nm, and the intensity of absorption peaks is increased with the increasing of radiation doses. When the fiber samples were excited with a 532 nm pump, the intensity of the near infrared fluorescence decreased lightly. However, when the fiber samples were excited with a 980 nm pump the intensity of the fluorescence increased significantly with the increase of radiation doses (0-2.0 kGy). The intensity of fluorescence decreased when the radiation doses were increased up to 3.0 kGy. furthermore, the fluorescence intensity of the 1410 nm band increased much more than that the 1150 nm band. In addition, the microstructural characteristics of the Bi/Al-codoped silica optical fibers were analyzed using electron spin resonance (ESR). Many radiation-induced defect centers were present, and the intensity of the ESR signals also increased with the increase of radiation doses. The photoluminescence properties and microstructural characteristics were related in the radiated Bi-related silica optical fibers. A possible underlying mechanism for the radiation-induced photoluminescence enhancement process in the Bi/Al-doped silica fiber is discussed.

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“…Ge-. P-, B-and Al-doped silica glasses have been studied in the past for fiber optics applications [1,12].…”

Section: Introductionmentioning

confidence: 99%

Experimental Study of Combined Effects of Gamma and Laser Radiations on the Properties of Silicate Glass Materials

Khaydarov¹,

Beisinbaeva²,

Khaydarov³

et al. 2015

cme

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Effect of 60 Co γ-ray radiation at room temperature up to a dose of 5⋅10 7 Gy on the parameters of laser-generated plasma ions at the surface of single crystalline silicon and multicomponent silicate glass targets is investigated using time-of-flight mass spectrometer based on an electrostatic energy analyzer. The main impact of the radiation is observed in the charge state of the plasma ions: for small energy ions the charge increases with increasing the radiation dose, whereas the increase in the radiation dose results in the decrease of the charge of high-energy ions. The maximum energy of the ions also decreases with increasing the radiation dose. Effect of point defects created by metal atom inclusions on the absorption properties of silicate glasses is also studied. The defects decrease the resistance of the glasses to optical damage as they become centers of intense light absorption.

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Growth kinetics of AlOHC defects in γ-irradiated silica glasses

Cited by 22 publications

References 44 publications

Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition

Experimental Study of Combined Effects of Gamma and Laser Radiations on the Properties of Silicate Glass Materials

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