Growth kinetics of solid-liquid Ga interfaces: Part I. Experimental

Peteves, S. D.; Abbaschian, R.

doi:10.1007/bf02660658

Cited by 85 publications

(40 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Resultsmentioning

confidence: 99%

“…If a singular grain boundary is rapidly moving, its shape may become curved by kinetic roughening as a surface. [38][39][40][41][42][43][44] It is therefore possible that not all singular grain boundaries are identified by their shapes in the specimens heat-treated at low temperatures.The grain boundary defaceting transition observed in this Si-iron is similar to those observed in other metals. [13][14][15][16][17][18] The transition temperature of approximately 1 000°C (about 0.73 T m ) also falls into the range of 0.6-0.9 T m observed in other metals, [13][14][15][16][17][18][27][28][29] although the transition temperatures vary among the grain boundaries and depend also on additives and impurities.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Choi

Yoon

2003

ISIJ International

View full text Add to dashboard Cite

Grain boundary shapes and grain growth in bulk 2.61 wt% silicon-iron have been studied by heat-treating at temperatures between 700 and 1 200°C. Initial microstructure with fairly uniform fine grains has been obtained by recrystallization at 800°C for 5 min after deformation. When subsequently heat-treated at 700 and 800°C, a fraction of the grain boundaries have hill-and-valley shapes with several facet planes or kinks. Some of these facet boundary segments are expected to be singular. Abnormal grain growth occurs at 700 and 800°C and is attributed to step growth of the boundaries. When heat-treated at 1 000°C, all grain boundaries are defaceted with smoothly curved shapes, indicating that they are atomically rough. At temperatures above 1 000°C, normal grain growth occurs, because the rough grain boundaries move continuously. This correlation between grain boundary structure and grain growth is consistent with the earlier observations in other metals and oxides. It is thus shown that the abnormal grain growth in this alloy occurs at low temperatures because of the singular grain boundary structure.KEY WORDS: silicon-iron; silicon-steel; abnormal grain growth; grain boundary faceting; singular grain boundary.ing along the grain boundaries using an image analysis program. For the specimens with fine grains, about 500-2 000 grains were measured, and for those with large grains, about 100-300 grains were measured. The grain boundary shapes were also examined in a transmission electron microscope (TEM). Results and DiscussionWet chemical analysis of the heat-treated bar showed that the Si content was 2.61 wt% and the major impurities were P (0.015 wt%), Ni (0.06 wt%), and Cr (0.01 wt%). The C, Mn, and S contents were about 0.005 wt%. The specimens heat-treated at 800°C for 5 min after compressing to 66.7 % in height had typical primary recrystallization structures with fine grains of 8.7 mm in average radius as shown in Fig. 1. The X-ray pole figure and electron back-scattered pattern (EBSP) analysis of these specimens did not show any macroscopic or microscopic texture. Figure 1 is the initial microstructure for all subsequent heat-treatments at various temperatures to observe the grain growth behavior.The grain growth during the heat-treatment at 600°C was very slow. After 250 h at 600°C, the grains were only slightly larger than those shown in Fig. 1. During the heattreatment at 700°C, typical AGG behavior was observed as shown in the microstructures of Fig. 2, and grain size distributions in Fig. 3. After 3 h, some large grains began to appear as shown in Fig. 2(a), and after 24 h, some grains had grown to about 700 mm radius as shown in Fig. 2(d). In Fig. 3, those large grains that could be clearly identified as the abnormal grains are marked by arrows. The fine matrix grains grew slowly as can be seen in Figs. 2 and 3.When the heat-treatment temperature was increased to 800°C, distinct AGG behavior was again observed during 24 h, but the number density of the abnormal grains was larger than that observed at ...

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Choi

Yoon

2003

ISIJ International

View full text Add to dashboard Cite

show abstract

“…The relaxation time depends more strongly on temperature and may be as small as a few tens of nanoseconds (figure 5). The decrease of the relaxation time can be explained by the fact that the recrystallization velocity v depends on the temperature: v ∝ (T − T 0 ), where S87 T 0 = 29.6 • C is the melting temperature of gallium [24], so the further the system is from the melting temperature, the shorter the time required for the metastable metallized layer to re-crystalize back to the α-phase. The overall bandwidth of the registration system was 125 MHz, so the transient 'switch-on' time was not resolved in this experiment.…”

Section: Optical Control Functionalitymentioning

confidence: 99%

Active control of surface plasmon–polariton waves

Krasavin¹,

Zayats²,

Zheludev³

2005

J. Opt. A: Pure Appl. Opt.

View full text Add to dashboard Cite

We outline a new concept for active plasmonics that exploits light-induced nanoscale structural transformations in the waveguide material. The concept is illustrated by numerical modelling and test experiments on a gallium-dielectric interface. We also discuss other possible implementations of the concept such as an electro-plasmon modulator, a plasmon detector and a switch that controls one plasmon wave with another.

show abstract

“…Faceted grains in many material systems are (b) explained as a result of two-dimensional growth or growth faster than ͗111͘ directions by a factor of about 1.5 ϫ 10 3 at an undercooling of 1.8 K, which is due to dislocation structure. [37] The relationship between the growth rate and driving force for each crystal plane of WC-Co alloy is scheneighbor atoms and thus are unstable. Impediment of grain growth by unfavorably oriented grains is primarily due to matically shown in Figure 18.…”

Section: Comparison Of the Monte-carlomentioning

confidence: 99%

Anisotropic grain growth based on the atomic adsorption model in WC-25 pct Co alloy

Ryoo

Hwang²,

Kim³

et al. 2000

Metall Mater Trans A

View full text Add to dashboard Cite

The process of triangular prism formation and abnormal grain growth of WC was modeled using pseudo-Monte-Carlo simulation based on atomic adsorption and the coalescence mechanism. Grains of WC evolved into a triangular prism shape due to {1010} and {1210} planes of fast growth rate. Coalescence of {1010} and {1100} planes subsequent to the anisotropic evolution was the main reason for the abnormal grain growth. The probability of coalescence computed by the Monte-Carlo method agreed well with a theoretical prediction. Experimental evaluation of the computational model was made in sintered WC-25 wt pct Co alloy. The experimental alloy was made with WC powder of different particle size, 0.8 m and Ϫ325 mesh, respectively, and with two different sintering conditions: solid-phase sintering and liquid-phase sintering. The sample made from the coarse powder (Ϫ325 mesh) showed the same morphological characteristics as those of the original milled state, whereas the sample made from the fine powder (0.8 m) assumed a triangular prism shape quickly during solid-phase sintering. The anisotropic growth process of the latter sample could be explained by using the adsorption and coalescence model.

show abstract

Growth kinetics of solid-liquid Ga interfaces: Part I. Experimental

Cited by 85 publications

References 33 publications

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Active control of surface plasmon–polariton waves

Anisotropic grain growth based on the atomic adsorption model in WC-25 pct Co alloy

Contact Info

Product

Resources

About