Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

Ng, Kwok K.; Polito, W. J.; Ligenza, J. R.

doi:10.1063/1.94857

Cited by 30 publications

(12 citation statements)

References 12 publications

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“…This wide variation is consistent with the experiments where activation energies in the range 0.7-1.6 eV were found in oxides grown in different ways [11]. Deal and Grove [9] and others [20] extract an activation energy of 1.2-1.3 eV from oxidation data, but this energy includes the "incorporation energy" for oxygen molecules which was recently reported to be 0.4 eV [12]. These experiments suggest that there are diffusion paths along which the barrier does not exceed 0.9 eV.…”

supporting

confidence: 91%

Reactions and Diffusion of Water and Oxygen Molecules in AmorphousSiO2

Bakos¹,

Rashkeev²,

Pantelides³

2002

Phys. Rev. Lett.

155

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Water and oxygen molecules determine many of the properties of amorphous SiO2 used in several technologies, but the underlying atomic-scale processes remain unresolved. We report results of first-principles calculations showing that a wide range of behavior is possible in an amorphous environment, including diffusion of the molecule as a whole and various reactions with the network. Experimental data including oxygen exchange reaction and radiation sensitivity are accounted for. The possibility of H3O+ formation as a source of positive charge is discussed.

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supporting

confidence: 91%

Reactions and Diffusion of Water and Oxygen Molecules in AmorphousSiO2

Bakos¹,

Rashkeev²,

Pantelides³

2002

Phys. Rev. Lett.

155

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“…This interpretation is fully consistent with the activation energies obtained through tagged 18 O diffusion experiments 15 and the thermal oxidation of Al-doped SiCN ceramics 13 14 . Compared with the results obtained for the diffusion of O 2 in a pure silica structure (0.6–1.5 eV) 20 21 22 , the diffusion barrier is much higher in silica doped with small amounts of aluminum. The high diffusion barrier could explain the low diffusivity of oxygen molecules in case of small Al doping concentrations, as well as the abnormally high oxidation resistance of SiC 23 and SiCN 13 14 doped with small amounts of Al.…”

Section: Resultscontrasting

confidence: 66%

Abnormal behavior of silica doped with small amounts of aluminum

Liu

Wang

2016

Sci Rep

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Silica is the most abundant mineral in the crust of the Earth. It has been demonstrated that the aluminum concentration in silica plays a key role in determining many properties of silica-based components. Although the alumina-silica system has been intensely studied, the effect of very small amounts of aluminum on the structure and properties of silica remains unclear. We report results of first principles calculations showing that small amounts of aluminum could be metastable when located in the center of Si-O rings without breaking the silica network. In contrast, higher aluminum contents will result in the destruction of the Si-O bonds, leading to the formation of triclusters and a 4-, 5-, and 6-fold Al-O coordination, as observed in previous studies. Based on the silica structure obtained through geometric optimization, the properties of silica doped with small amounts of aluminum were calculated. The results can account for many ‘abnormal’ phenomena experimentally observed. The results benefit most areas such as geosciences, microelectronics, glass industry, and ceramic materials.

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“…1͑b͒. This value is about 1/4 of that for dry O 2 oxidation ͑1.34 eV͒, 14 indicating that the O atom dissociated from O 3 diffused into the Si network much more easily. However, the B values of 330 and 260°C oxidation are smaller than E a ϭ0.32 eV line depicted in Fig.…”

mentioning

confidence: 87%

High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C

Nishiguchi

Nonaka

Ichimura

et al. 2002

Applied Physics Letters

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Highly concentrated ͑Ͼ93 vol %͒ ozone (O 3) gas was used to oxidize silicon for obtaining high-quality SiO 2 film at low temperature. Compared to O 2 oxidation, more than 500°C lower temperature oxidation ͑i.e., from 830 to 330°C͒ has been enabled for achieving the same SiO 2 growth rate. A 6 nm SiO 2 film, for example, could be grown at 600°C within 3 min at 900 Pa O 3 atmosphere. The temperature dependence of the oxidation rate is relatively low, giving an activation energy for the parabolic rate constant of 0.32 eV. Furthermore, a 400°C grown SiO 2 film was found to have satisfactory electrical properties with a small interface trap density (5ϫ10 10 cm Ϫ2 /eV) and large breakdown field ͑14 MV/cm͒.

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Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

Cited by 30 publications

References 12 publications

Reactions and Diffusion of Water and Oxygen Molecules in AmorphousSiO2

Reactions and Diffusion of Water and Oxygen Molecules in AmorphousSiO2

Abnormal behavior of silica doped with small amounts of aluminum

High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C

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