Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

Petitdidier, S.; Bertagna, Valérie; Rochat, N.; Rouchon, D.; Besson, P.; Erre, R.; Chemla, M.

doi:10.1016/j.tsf.2004.09.008

Cited by 16 publications

(10 citation statements)

References 23 publications

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“…The area differences at the initial measurement (time equal to zero) between samples are caused by bond density variations on the chemically grown oxide due to its non-uniform nature. 13 Nevertheless, this specific bond presents constant absorbance characteristics after immersion in all pH buffers. This is expected since it would be hard that the solution could have reached the interfacial oxide and modified its chemical properties at such short immersion times.…”

Section: Ftir After Time-dependent Immersion In Ph Buffer Solutions-mentioning

confidence: 99%

Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions

Reyes

Ramos

Islas

et al. 2013

J. Electrochem. Soc.

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The chemical and morphological properties of thin aluminum oxide film surfaces (Al 2 O 3 having 10 nm in thickness) in the asdeposited (dry) and after immersion (in pH buffer solutions) conditions were studied. Careful measurement conditions have been followed in order to determine any possible physical and/or chemical change on the surface of these films (after immersion in pH), so that proper correlation to their high and stable sensitivity to pH is possible. After deposition of thin Al 2 O 3 films (by Atomic Layer Deposition, ALD) on chemically oxidized p-type silicon wafers, the resulting Al 2 O 3 /SiO X /Si stacked structures were characterized by Fourier-Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) before and after immersion in pH buffer solutions. Also, the Capacitance-Voltage (C-V) and Current-Voltage (I-V) characteristics were obtained after fabrication of Metal-Insulator-Semiconductor (MIS) devices in order to correlate the good chemical and morphological characteristics of thin Al 2 O 3 to its electrical properties. Based on the characterization results, low surface oxidation/dissolution mechanisms are found in ALD aluminum oxide films when immersed in pH buffer solutions during short immersion times (immersion time ≤ 10 minutes); therefore, leading to the characteristic slow degradation of the sensitivity to pH for this dielectric material.Ion-Sensitive Field-Effect Transistor (ISFET) devices, which are able to sense the activity of diverse chemical and biological species by transducing an electrochemical reaction into an electronic current, have a widespread use in these areas due to their micron-sized geometries (high integration density), fast speed of response and relatively low cost. Although they have many advantages, there are also various drawbacks to overcome. For instance, there is a considerable drift and hysteresis of ISFET response when it is operated in the long term under continuous conditions. These instabilities are usually related to the degradation of the chemical composition of the sensing layer (typically silicon nitride, Si 3 N 4 ); i.e., oxidation degrades the commonly stable chemical response of the nitride layer to the unstable SiO 2 ; 1 also, hydration of the Si 3 N 4 film could modify its dielectric properties in such a way that a more conductive surface layer is formed 2 and finally, saturation of the film's surface could occur from continuous adsorption of the chemical species of interest. 1 On the other hand, for integration into useful electronic devices, these sensing materials must comply with a fully compatible Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process, so that a low manufacturing cost of the final sensor can be obtained; 3-5 as a result, world research efforts are being focused into using novel dielectric materials as sensitive gates for ISFETs like stoichiometric Al 2 O 3 . Although aluminum oxide presents a high sensitivity to pH (close to the ideal Nernstian response), 2,6 neither the degradation mechanisms for ...

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Section: Ftir After Time-dependent Immersion In Ph Buffer Solutions-mentioning

confidence: 99%

Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions

Reyes

Ramos

Islas

et al. 2013

J. Electrochem. Soc.

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“…Figure 3(e-f) shows a graphical representation of the average behavior of all TM 1,m modes in the 1420-1470 nm span after each chemical treatment. The results reveal that the HCl oxidation was slightly less effective at passivating the silicon surface than the Piranha oxidation; however, it is expected that the optimum solution for chemical oxidation will depend upon the Si crystal orientation and previous chemical treatments [5,8].…”

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confidence: 97%

“…The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices [1,2,3,4,5,6,7,8], from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor.…”

mentioning

confidence: 99%

Measuring the role of surface chemistry in silicon microphotonics

Borselli

Johnson

Painter

2006

Applied Physics Letters

103

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The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the gate oxide thickness of modern transistors is roughly 5 atomic layers, with 8 metal wire layers required to transport all the signals within a microprocessor. In addition to the increasing latency of such reduced-dimension metal wires, further "Moore's Law" scaling of transistor cost and density is predicted to saturate in the next decade. As a result, silicon-based microphotonics is being explored for the routing and generation of high-bandwidth signals. In comparison to the extensive knowledge of the electronic properties of the Si/SiO2 interface, little is known about the optical properties of Si surfaces used in microphotonics. In this Letter, we explore the optical properties of the Si surface in the telecommunication-relevant wavelength band of 1400-1600 nm. Utilizing a high quality factor (Q ~ 1.5x10^6) optical microresonator to provide sensitivity down to a fractional surface optical loss of 10^-7, we show that optical loss within Si microphotonic components can be dramatically altered by Si surface preparation, with fraction loss of 2 x 10^-5 measured for chemical oxide surfaces as compared to <2 x 10^-6 for hydrogen-terminated Si surfaces. These results indicate that the optical properties of Si surfaces can be significantly and reversibly altered by standard microelectronics treatments, and that stable, high optical quality surface passivation layers will be critical in future Si micro- and nano-photonic systems

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“…This is born out by comparing the trends in k WCA , k OH , and k CH,mono (Tables II and III) to the distribution in isolated and hydrogen-bonded hydroxyl groups (Table I). They found that nearly all of the isolated OH reacted with (CH 3 ) 3 SiCl, while only a small percentage of hydrogen-bonded OH groups exhibited reactivity. This suggests that the isolated hydroxyl groups are more reactive toward the organic molecules than the hydrogen-bonded hydroxyl groups.…”

Section: Discussionmentioning

confidence: 99%

Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning

Williams

Hicks

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inEvolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate Silicon native oxide surfaces were cleaned with a radio frequency, atmospheric pressure helium and oxygen plasma and with an RCA standard clean-1. Both processes create a hydrophilic state with water contact angles of <5 and 16.2 6 1.7 , respectively. During subsequent storage in a chamber purged with boil off from a liquid nitrogen tank, the water contact angle increased over time at a rate dependent on the cleaning method used. Internal reflection infrared spectroscopy revealed that the change in water contact angle was due to the adsorption of organic molecules with an average hydrocarbon chain length of 10 6 2. The rate of the adsorption process decreased with the fraction of hydrogen-bonded hydroxyl groups on the surface relative to those groups that were isolated. On Si (100) surfaces that were cleaned by RCA standard clean-1 and then the plasma, 95.8% of the silanol groups were hydrogen bonded. The first-order rate constant for adsorption of the organic contaminant on this surface was 0.182 6 0.008 h À1 .

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Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

Cited by 16 publications

References 23 publications

Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions

Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions

Measuring the role of surface chemistry in silicon microphotonics

Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning

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Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

Cited by 16 publications

References 23 publications

Chemical and Morphological Characteristics of ALD Al2O3Thin-Film Surfaces after Immersion in pH Buffer Solutions

Chemical and Morphological Characteristics of ALD Al2O3Thin-Film Surfaces after Immersion in pH Buffer Solutions

Measuring the role of surface chemistry in silicon microphotonics

Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning

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Product

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Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions

Chemical and Morphological Characteristics of ALD Al₂O₃Thin-Film Surfaces after Immersion in pH Buffer Solutions