2002
DOI: 10.1063/1.1522485
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Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

Abstract: In atomic layer deposition (ALD), film thickness control by counting the number of deposition sequences is poor in the initial, nonlinear growth region. We studied the growth of TiN films formed by sequentially controlled reaction of TiCl4 and NH3 on thermal SiO2 during the transient, nonlinear period. Using low-energy ion scattering and Rutherford backscattering spectroscopy analysis, we have found that a three-dimensional growth of islands characterizes the ALD TiN growth on SiO2. Growth at different tempera… Show more

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Cited by 92 publications
(53 citation statements)
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“…(1) The silanols can also react with to generate well-defined charge transfer species (as depicted by Equation 2). In fact reactions are essential for metal barrier films to bind to the isolation liner dielectric [27]. Thus, the "hard failed" that persists after extensive annealing could also be silo-metal complexes formed by the condensation of silanols with the tantalum in the barrier layers, as depicted in equation (3) (2) Based on these observations we propose that the early failures involve RF scattering by dangling bonds in the liner oxide (ozone/TEOS film).…”
Section: Resultsmentioning
confidence: 98%
“…(1) The silanols can also react with to generate well-defined charge transfer species (as depicted by Equation 2). In fact reactions are essential for metal barrier films to bind to the isolation liner dielectric [27]. Thus, the "hard failed" that persists after extensive annealing could also be silo-metal complexes formed by the condensation of silanols with the tantalum in the barrier layers, as depicted in equation (3) (2) Based on these observations we propose that the early failures involve RF scattering by dangling bonds in the liner oxide (ozone/TEOS film).…”
Section: Resultsmentioning
confidence: 98%
“…However, there are still some problems to be solved before ALD can be successfully applied and integrated into future ultra low-k process fl ows. The starting surface condition plays an important role for the growth behavior during the initial stages of growth [125,131,132]. This is attributed to either a different density of functional, reactive groups on the substrate surface (e.g., -OH versus -NH 2 ligands) or to a different reactivity of these groups with the precursor molecules.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
“…This is attributed to either a different density of functional, reactive groups on the substrate surface (e.g., -OH versus -NH 2 ligands) or to a different reactivity of these groups with the precursor molecules. If the density of functional groups and/or the reactivity is too low, the nucleation of the ALD fi lm is severely hampered which could result in an island-type growth behavior rather than layer-by-layer growth during the initial cycles of growth [132]. The growth behavior of ALD layers can be studied using Rutherford backscattering spectroscopy (RBS) or X-ray fl uorescence (XRF) [131] by measuring the total number of deposited Ta atoms.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%
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“…We employ here ex situ angle-resolved XPS and LEISS to examine each layer, and results from AFM will also be presented. In appropriate sections, we will refer to previous work conducted on films deposited by ALD (or similar techniques) and examined via the use of LEISS, [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] ARXPS, [24][25][26][27][28] and SIMS. 17 The goal here is to compare and contrast the effectiveness of ex situ analysis of ultrathin films using ARXPS and LEISS to determine thin film uniformity and continuity.…”
Section: Introductionmentioning
confidence: 99%