Growth mechanism and optical properties of zinc oxide thin film

Abdullahi, S.; Momoh, M.; Isah, Kasim Uthman

doi:10.1504/ijret.2014.060358

Cited by 1 publication

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“…Microwave oven heating occurs in thin films as a result of interfacial (space charge) and reorientation polarization. Assuming a homogeneous strain across the ZnO films, the average grain size can be estimated using Equation 2 from the full-width at half maximum (FWHM) of the ( 002) peak (Abdullahi et al, 2014). The calculated grain size is listed in Table ( 1) and plotted in Figure 4.…”

Section: Preparation and Characterisation…mentioning

confidence: 99%

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PREPARATION AND CHARACTERISATION OF ZnO THIN FILMS DEPOSITED BY RF SPUTTERING METHOD

Abdullahi,

Abdullahi

et al. 2024

FJS

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Zinc oxide (ZnO) thin films deposited on corning glass substrates at 100ºC substrate temperature by radio frequency deposition were annealed the open air and icrowave oven at 150ºC. The influence of open-air annealing (OAA) and microwave annealing (MWA) were studied. The results obtained showed that MWA annealing can improve not only the crystal but also the optical properties of the ZnO thin films. A high transmittance is obtained in all the annealed samples (S1, S2, S4 and S5) demonstrating >90% at 650 nm wavelength. Reflectance in all the samples was < 29% with a minimum standing at 23.78% as recorded for sample S5. The band gap for the annealed samples (S1, S2, S4 and S5) was determined at 3.26 eV, 3.32 eV, 3.29 eV and 3.34 eV respectively. Absorption coefficient stood at 0.0225 cm-1, 0.0179 cm-1, 0.0180 cm-1, 0.0186 cm-1 and 0.0181 cm-1 for the as-deposited sample and the respectively. The optical and structural properties analysis showed that OAA and MWA annealing at suitable temperatures considered can significantly improve some properties of the ZnO thin films making the films suitable for applications in optoelectronics and photovoltaics.

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Section: Preparation and Characterisation…mentioning

confidence: 99%

“…It is generally believed that this increase in the band gap is due to the Burstein-Moss shift that is due to increase in carrier concentration, and the absorption edge shifts to a higher energy level. (Abdullahi et al, 2015). Figure (9a) shows the extrapolated energy band gap for the as-deposited sample.…”

Section: Optical Propertiesmentioning

confidence: 99%

PREPARATION AND CHARACTERISATION OF ZnO THIN FILMS DEPOSITED BY RF SPUTTERING METHOD

Abdullahi,

Abdullahi

et al. 2024

FJS

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show abstract

Growth mechanism and optical properties of zinc oxide thin film

Cited by 1 publication

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PREPARATION AND CHARACTERISATION OF ZnO THIN FILMS DEPOSITED BY RF SPUTTERING METHOD

PREPARATION AND CHARACTERISATION OF ZnO THIN FILMS DEPOSITED BY RF SPUTTERING METHOD

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