Growth mechanism, field emission and photoluminescence property of Ge-doped hexagonal cone-shaped GaN nanorods

Li, Enling; Zhao, Binyue; Lv, Shitao; Cui, Zhen; Ma, Deming; Li, Meiqin

doi:10.1016/j.spmi.2018.07.002

Cited by 5 publications

(2 citation statements)

References 32 publications

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“…The pure GaN, 6% and 8% Co-doped GaN NWs were excited with 325 nm He-Cd laser with a power of 0.0016 mW. Pure GaN NWs exhibited a single emission peak at 367 nm corresponding to a band edge transition of GaN agreeing with the literature [60]. The 6% and 8% Co-doped GaN NW excited with same laser caused band-edge (BE) emission at 368.85 nm (3.361 eV) for 6% and 370.26 nm (3.348) for 8% cobalt doping, causing a small red shift due to the inclusion of cobalt in GaN.…”

Section: Photoluminescence (Optical Properties)supporting

confidence: 83%

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

et al. 2020

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Group III–V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60–200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.

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Section: Photoluminescence (Optical Properties)supporting

confidence: 83%

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

et al. 2020

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“…Figure a shows a schematic (top), energy band structure at the interface between a GaN NW and graphene (middle), and an equivalent circuit (bottom) of a stretchable GaN-NW photosensor. The electron affinity of the GaN NW and the work function of graphene were considered according to the previous reports. − The total resistance throughout the graphene channel is denoted as R Graphene . The total resistance and capacitance at the interfaces between GaN NWs and graphene are conceptually denoted as R NW–graphene and C NW–graphene , respectively.…”

Section: Resultsmentioning

confidence: 99%

Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity

Han

Noh

Kim

et al. 2021

ACS Appl. Mater. Interfaces

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To effectively implement wearable systems, their constituent components should be made stretchable. We successfully fabricated highly efficient stretchable photosensors made of inorganic GaN nanowires (NWs) as light-absorbing media and graphene as a carrier channel on polyurethane substrates using the pre-strain method. When a GaN-NW photosensor was stretched at a strain level of 50%, the photocurrent was measured to be 0.91 mA, corresponding to 87.5% of that (1.04 mA) obtained in the released state, and the photoresponsivity was calculated to be 11.38 A/W. These photosensors showed photocurrent and photoresponsivity levels much higher than those previously reported for any stretchable semiconductor-containing photosensor. To explain the superior performances of the stretchable GaN-NW photosensor, it was approximated as an equivalent circuit with resistances and capacitances, and in this way, we analyzed the behavior of the photogenerated carriers, particularly at the NW–graphene interface. In addition, the buckling phenomenon typically observed in organic-based stretchable devices fabricated using the pre-strain method was not observed in our photosensors. After a 1000-cycle stretching test with a strain level of 50%, the photocurrent and photoresponsivity of the GaN-NW photosensor were measured to be 0.96 mA and 11.96 A/W, respectively, comparable to those measured before the stretching test. To evaluate the potential of our stretchable devices in practical applications, the GaN-NW photosensors were attached to the proximal interphalangeal joint of the index finger and to the back of the wrist. Photocurrents of these photosensors were monitored during movements made about these joints.

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An Insights into Non-RE Doped Materials for Opto-Electronic Display Applications

2022

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Growth mechanism, field emission and photoluminescence property of Ge-doped hexagonal cone-shaped GaN nanorods

Cited by 5 publications

References 32 publications

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response

Stretchable Inorganic GaN-Nanowire Photosensor with High Photocurrent and Photoresponsivity

An Insights into Non-RE Doped Materials for Opto-Electronic Display Applications

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