Growth mechanism of beam-induced lateral epitaxy on (0 0 1) GaAs substrate in molecular beam epitaxy

Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

“…Recently, we proposed a new method for lateral growth called beam-induced lateral growth (BILE), which enables us to obtain lateral growth in molecular-beam epitaxy (MBE) [6][7][8][9]. In BILE, lateral growth is accomplished on prefabricated truncated ridges employing a low angle incidence of molecular beams.…”