2015
DOI: 10.1088/1757-899x/79/1/012031
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Growth mechanism of chemically prepared ZnO-SiO2nanostructures grown on glass and silicon substrates

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Cited by 3 publications
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“…Due to the low MO content in the glasses, the addition of ZnO, GeO 2 , and TiO 2 should lead to the formation of ZnO 4 with Si‐O‐Zn bond formation with IR band at 940 cm −1 , GeO 4 units with Ge‐O‐Ge bonds with IR bands at 870 cm −1 and of TiO 4 units with Si‐O‐Ti bonds with IR absorption band at ~900 cm −1 . Ga is expected to enter into the network as GaO 4 tetrahedral with IR band in the region ~613–620 cm −1 (not seen here) and Al as AlO 4 units with an IR band at 900 cm −1 .…”
Section: Resultsmentioning
confidence: 84%
“…Due to the low MO content in the glasses, the addition of ZnO, GeO 2 , and TiO 2 should lead to the formation of ZnO 4 with Si‐O‐Zn bond formation with IR band at 940 cm −1 , GeO 4 units with Ge‐O‐Ge bonds with IR bands at 870 cm −1 and of TiO 4 units with Si‐O‐Ti bonds with IR absorption band at ~900 cm −1 . Ga is expected to enter into the network as GaO 4 tetrahedral with IR band in the region ~613–620 cm −1 (not seen here) and Al as AlO 4 units with an IR band at 900 cm −1 .…”
Section: Resultsmentioning
confidence: 84%