Surfaces and Interfaces
 2024
DOI: 10.1016/j.surfin.2024.105024
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Growth mechanism of HfO2 film on H-terminated Si (100) surface from atomic layer deposition process using tetrakis(ethylmethylamino)hafnium

Truong Ba Tai,
Phuong Minh Nguyen,
Jonghun Lim
et al.
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