2008
DOI: 10.1103/physrevlett.101.055503
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Growth Mechanism of Si-Faceted Dendrites

Abstract: The growth mechanism of Si-faceted dendrite was studied using an in situ observational technique. We directly observed the growth processes of Si-faceted dendrites from Si melts. It is found that triangular corners with an angle of 60 degrees are formed at the dendrite tip. We present an original growth model for faceted dendrites based on the experimental evidence. The model fully explains the growth process of faceted dendrites.

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Cited by 80 publications
(82 citation statements)
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References 25 publications
(36 reference statements)
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“…For example, our simulation predicts that a measurement of the ground-state antihydrogen atom yield as a function of the positron plasma temperature at a positron plasma density n e ≃ 10 14 m −3 would show a weaker power-law scaling behaviour than that of three-body recombination. It is noted that the positron temperature dependence of antihydrogen formation was measured at positron density n e ≃ 10 14 m −3 , and an observed scaling behaviour of T −1.1±0.5 e was reported [4] by the ATHENA collaboration, which is consistent with the direction of our prediction qualitatively. …”
Section: Discussionsupporting
confidence: 80%
“…For example, our simulation predicts that a measurement of the ground-state antihydrogen atom yield as a function of the positron plasma temperature at a positron plasma density n e ≃ 10 14 m −3 would show a weaker power-law scaling behaviour than that of three-body recombination. It is noted that the positron temperature dependence of antihydrogen formation was measured at positron density n e ≃ 10 14 m −3 , and an observed scaling behaviour of T −1.1±0.5 e was reported [4] by the ATHENA collaboration, which is consistent with the direction of our prediction qualitatively. …”
Section: Discussionsupporting
confidence: 80%
“…The reentrant corners give incorporation sites that favor growth over sites on singular surfaces. Fujiwara, et al, 22 have extended those earlier works with observations and analysis of dendritic silicon crystallizing from the melt at the 100 μm to millimeter scale. For the nanoplatelets reported here, several lines of evidence point to them also growing by a twin-boundary catalyzed dendritic growth mechanism, though at much finer length scales: The facets commonly have 120 • and 60 • angles, observed for example in Figs.…”
Section: Copyright 2013 Author(s) This Article Is Distributed Under mentioning
confidence: 90%
“…2 While the growth of thin silicon and germanium sheets, catalyzed at the edges of {111} twin planes, has been known for some time, [17][18][19][20][21] reports on this mechanism for silicon typically deal with crystallization from the melt at length scales of 100 μm to 1 mm. 22 At smaller scales, diamond nanoplatelets having 10-nm-scale thicknesses and 100-nm-scale extents have been reported, apparently also catalyzed by twin planes. 23 Here we report results from a 71-growth survey of titanium-catalyzed silicon nanowire growth conditions with atmosperic-pressure chemical vapor deposition (CVD).…”
mentioning
confidence: 99%
“…This production method resulted in antihydrogen atoms which survived for much longer (on the order of hundreds of microseconds) than in-flight antihydrogen. Moreover, both ATHENA and ATRAP were able to obtain high antihydrogen production rates (with peak rates on the order of hundreds per second) [38,39], which allowed for the detailed study of the formation temperature [40,41] and cooling dynamics [42], as well as for the investigation of modulated [43] and stimulated [44,45] formation. The ATHENA apparatus also contained a versatile antihydrogen detector, allowing for the three-dimensional imaging of antiproton annihilations [46], which was, in turn, used to study the spatial and temperature profile of the produced antihydrogen distribution [47].…”
Section: Gravitational Interaction Between Matter and Antimattermentioning
confidence: 99%