2020
DOI: 10.1016/j.mattod.2020.05.019
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Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission

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Cited by 25 publications
(13 citation statements)
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“…Core/shell Ge/Ge 1– x Sn x nanowires were grown via a three-step process consisting of gold catalyzed vapor-liquid-solid (VLS) growth along with CVD deposition similar to that previously reported. , The deposition system used consisted of a load-locked, lamp-heated, rapid thermal, 8 in. quartz cold wall CVD chamber with a base pressure of approximately 10 –7 Torr.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Core/shell Ge/Ge 1– x Sn x nanowires were grown via a three-step process consisting of gold catalyzed vapor-liquid-solid (VLS) growth along with CVD deposition similar to that previously reported. , The deposition system used consisted of a load-locked, lamp-heated, rapid thermal, 8 in. quartz cold wall CVD chamber with a base pressure of approximately 10 –7 Torr.…”
Section: Methodsmentioning
confidence: 99%
“…Investigations of the thermal stability of the native GeSn oxide were performed using samples previously grown and purposefully left to oxidize at room temperature in laboratory air. Samples were left to oxidize for at least 2 months to minimize sample-to-sample variation in oxide thickness. , The samples investigated had Sn compositions in the GeSn shell of 2, 4, 6, and 12 at% as determined via XRD, using a procedure described previously . The growth conditions for these samples are shown in Table S2.…”
Section: In Situ Decomposition Of Native Gesn Oxidementioning
confidence: 99%
“…131,132 The impact of Sn content on the lasing line position has also been studied. 133,134 In this section, we will show some studies on the lasing modes from GeSn nanolayers and the parameters on which the lasing line depends, such as the cooling temperature, Sn content percentage, and optical pump power. Many works demonstrated the reduction of dislocations in GeSn materials and carrier connement.…”
Section: Gesn-based Led Devicesmentioning
confidence: 99%
“…Recently, CMOS-compatible group-IV materials such as Ge and GeSn have attracted much attention as a gain medium for on-chip lasers operating at wavelengths deep in the infrared relevant to free-space communication and sensing applications [10][11][12][13][14][15] . Particularly, group-IV bottom-up nanowires have the potential to produce the smallest, CMOS-compatible on-chip light sources, thus motivating many researchers to grow high-quality Ge and GeSn [16][17][18][19][20][21][22][23][24][25] . In the last decade, the photoluminescence characteristics of Ge and GeSn nanowires have been unveiled [16][17][18][19][20][21][22][23] .…”
Section: Introductionmentioning
confidence: 99%
“…Particularly, group-IV bottom-up nanowires have the potential to produce the smallest, CMOS-compatible on-chip light sources, thus motivating many researchers to grow high-quality Ge and GeSn [16][17][18][19][20][21][22][23][24][25] . In the last decade, the photoluminescence characteristics of Ge and GeSn nanowires have been unveiled [16][17][18][19][20][21][22][23] . Temperature-dependent photoluminescence from an ensemble of vertically grown nanowires revealed the direct bandgap nature of GeSn nanowires with a high Sn contents up to ~ 19 at% 19,20 .…”
Section: Introductionmentioning
confidence: 99%