Growth modulation of simultaneous epitaxy of ZnO obliquely aligned nanowire arrays and film on r-plane sapphire substrate

Three-Dimensional Cross-Linked Arrays of Comb-Like ZnO: Epitaxial Growth and Modulation

“…To further confirm our elaboration, we constructed a 3D model projection to explain the epitaxial growth mechanism. As shown in Figure 9a 36,49 The angle between the growth directions of the two symmetrical backbone nanosails is about 60°. We suggested that the three growth mechanisms of Au-VLS, VS, and Zn-VLS are cooperative during the growth process.…”

“… The symmetry and close match of the lattice constants between the r-sapphire and the a-plane ZnO provide the theoretical basis for successful heterogeneous epitaxy and are expected to enable the tuning of the growth direction of nanowires in the polar c ⟨0001⟩ direction as well as two nonpolar m ⟨101̅0⟩ and a ⟨112̅0⟩ directions. Also, the construction of ZnO nanostructures on sapphire substrates with different properties and application potential has been accomplished using a variety of techniques, including molecular beam epitaxy, , the sol–gel method, , chemical vapor deposition (CVD), , metal–organic chemical vapor deposition (MOCVD) , and atomic layer deposition (ALD) . Therefore, this work aims to prepare high-performance ZnO materials by epitaxially constructing 3D ordered structures on r-plane sapphire substrates by using a facile CVD method.…”

“…A mechanism for Zn self-catalytic VLS growth (Zn-VLS) was also proposed by Wang et al 47 in 2003, who suggested that the (0001)-Zn surface tends to aggregate zinc clusters at the growth front and will form ZnO nanowires via the Zn-VLS growth mechanism under Zn-rich conditions. According to Xiao and colleagues, 36 ZnO obliquely aligned nanowire arrays could be synthesized on Au-coated r-sapphire substrates by the Zn-VLS and Au-VLS growth mechanisms. Also, Yu et al 41 proposed that combining the Au-VLS and VS growth mechanisms allows for the formation of 3D cross-linked triangular ZnO nanosail arrays, and the triangular sails are formed by the VS growth process along the [0001] lateral expansion.…”

Epitaxial growth of aligned MgO nanowire arrays on a single crystalline substrate

“…The sample shows an ordered morphology, with particles on top of the nanowires, which is a typical feature of Au-catalyzed growth of nanowires. 24,25 The length of a single nanowire ranges from 0.8 to 1.5 μm. Nanowires can be classified into three types based on the morphological feature and growth direction.…”

Nanowire Electronics: From Nanoscale to Macroscale

“…The ZnO nanowire, as a typical semiconducting metal oxide nanowire, has attracted a lot of interest. − ,− Specifically, it has a wide direct band gap of ∼3.4 eV, large exciton binding energy of 60 meV, and high electromechanical coupling constant . The single-crystalline ZnO nanowire can be synthesized by the thermal evaporation under the VLS mechanism, where ZnO powders are directly used as the reactant .…”