1993
DOI: 10.1103/physrevlett.70.966
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Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation

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Cited by 224 publications
(97 citation statements)
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“…So far, the appearance of unexpected surfaces, as in the case of {311} in copper [26] and germanium [27], has often been explained only qualitatively in terms of adsorption effect due to the presence of impurities or a surface-modifying atmosphere [30,31]. However, a decisive theoretical reasoning on the presence of such unexpected surfaces in ECS is still lacking.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…So far, the appearance of unexpected surfaces, as in the case of {311} in copper [26] and germanium [27], has often been explained only qualitatively in terms of adsorption effect due to the presence of impurities or a surface-modifying atmosphere [30,31]. However, a decisive theoretical reasoning on the presence of such unexpected surfaces in ECS is still lacking.…”
Section: Methodsmentioning
confidence: 99%
“…For example, pure copper [26] and pure germanium [27] were reported to have additional surfaces in their ECS's, which were proposed as {311} facets whose energy is still considerably high in terms of the broken bond model. Though the unexpected surfaces were observed, the rank of the energies of each surface was always in conformity with that predicted by the model.…”
Section: Methodsmentioning
confidence: 99%
“…The formation of facets below the roughening temperature, and the Pakrovsky-Talapov predictions [26] for the edge shape (z(x)) of crystals have been demonstrated in a number of clean systems [27][28][29][30][31][32][33][34]. In addition to studies on 3D crystals, there has been substantial work on the 2D ECS of islands [15,[35][36][37][38][39]] to obtain the edge free energy, equilibrium edge fluctuations and decay kinetics.…”
Section: Introductionmentioning
confidence: 99%
“…Epitaxial growth on Br-passivated substrate assumes futher importance in the light of the recent spurt of activities on impurity (surfactant)-controlled epitaxial growth [17]. In the present work a 1200Å thin Au film was evaporated from a W basket onto a Br-passivated Si(111) substrate at room temperature in high vacuum (10 −6 Torr).…”
mentioning
confidence: 99%