Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating Yield

Abstract

A physical vapor transport process for growing vanadium-doped 6H-SiC single crystals was developed. Some 2-inch 6H-SiC wafers with resistivity larger than 10 12 X cm were obtained. A yield of semi-insulating wafers of 89% for the whole ingot was achieved, which indicates that a decrease in the incorporation of nitrogen and control of the consumption of vanadium during the whole growth run was successful. The concentrations of vanadium N V and nitrogen N N , determined by secondary-ion mass spectroscopy (SIMS), and the calculated relation of resistivity versus N V /N N helped us explore the reason for this high resistivity and high semi-insulating yield.