Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

Abstract

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.

AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

“…SiC films were grown by MOCVD on sapphire (0001) and Si (111) substrates in a custom made vertical stainless-steel vacuum chamber. Films were synthesized at 900 ºC using diethylmethylsilane (DEMS) as a single precursor without any carrier or bubbler gas, under a pressure in the chamber 5×10 -5 Pascal [10]. SEM cross section images showed 2 micron thick SiC films on both Si and sapphire substrates.…”

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

“…This CVD-based technique has enjoyed steady development since Manasevit’s initial work in 1969 [ 62 ]. It is one of the CVD methods frequently applied for the synthesis of SiC films [ 63 ], especially for the growth of thick SiC films due to its higher deposition rates (in the order of 40 nm/min) [ 64 ]. Thermodynamic effects—the dynamics of the fluids inside the reactor and the reactions in the gas phase and on the substrate surface—have a synergy in the film deposition process by MOCVD.…”

“…Some MOCVD SiC processes use single-source precursors, such as DEMS [ 64 , 70 , 71 ]. No gas carrier or bubbler was thus applied.…”

“…No gas carrier or bubbler was thus applied. The films grown at low temperatures (850 and 900 °C) on both substrates showed crystalline 3C-SiC in the (111) orientation [ 64 ]. Homoepitaxial SiC films were grown on 3.5° off-oriented (0001) 6H-SiC by MOCVD using bis-trimethylsilylmethane (BTMSM, C 7 H 20 Si 2 ) [ 72 ].…”

“…The reviews of Thompson et al [63], Fischer et al [66], Juergensen et al [67], Creighton and Parmeter [68], and Lee et al [69] discuss well the main reactors and growth modes of MOCVD technique. Some MOCVD SiC processes use single-source precursors, such as DEMS [64,70,71]. No gas carrier or bubbler was thus applied.…”