Growth of Adlayer Graphene on Cu Studied by Carbon Isotope Labeling

Li, Qiongyu; Chou, Harry; Zhong, Jinghua; Liu, Jun Yang; Dolocan, Andrei; Zhang, Junyan; Zhou, Yinghui; Ruoff, Rodney S.; Chen, Shanshan; Cai, Weiwei

doi:10.1021/nl303879k

Cited by 248 publications

(301 citation statements)

References 24 publications

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“…During the lateral growth of the first layer, the C precursor concentration might increase between the first layer and the Cu substrate, giving rise to the nucleation of the second layer graphene 25 . After the nucleation, however, the precursor density decreased and was kept less than that on the bare Cu substrate, resulting in the decrease in the nucleation and growth rate of second layer graphene.…”

Section: Resultsmentioning

confidence: 99%

“…To date, the real-time observations of the growth of graphene have been performed in ultra-high vacuum or low-pressure (o20 Pa) conditions on various metal substrates by scanning tunnelling microscopy, scanning transmission electron microscopy, low-energy electron microscopy, in situ Raman spectroscopy, environmental scanning electron microscopy (SEM) and so on [13][14][15][16][17][18][19][20][21][22] . From the viewpoint of scalable production of graphene, however, the combination of CH 4 gas and Cu substrate is considered the most promising, which requires the source gases with relatively high pressure from several Pa to atmospheric pressure [23][24][25][26][27][28][29] . The above-mentioned techniques could not be used for the growth of graphene on Cu under the atmosphere of source gases.…”

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confidence: 99%

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Radiation-mode optical microscopy on the growth of graphene

Terasawa

Saiki

2015

Nat Commun

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Chemical vapour deposition (CVD) growth of graphene has attracted much attention, aiming at the mass production of large-area and high-quality specimens. To optimize the growth condition, CVD grown graphene is conventionally characterized after synthesis. Real-time observation during graphene growth enables us to understand the growth mechanism and control the growth more easily. Here we report the optical microscope observation of the CVD growth of graphene in real time by focusing the radiation emitted from the growing graphene, which we call 'radiation-mode optical microscopy'. We observe the growth and shrinkage of graphene in response to the switching on and off of the methane supply. Analysis of the growth feature reveals that the attachment and detachment of carbon precursors are the rate-determining factor in the CVD growth of graphene. We expect radiation-mode optical microscopy to be applicable to the other crystal growth at high temperatures in various atmospheres.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Radiation-mode optical microscopy on the growth of graphene

Terasawa

Saiki

2015

Nat Commun

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“…8 However, largely because of the low catalytic reactivity for dehydrogenation on top of graphene and low C solubility inside Cu, graphene growth on Cu substrates is predominantly monolayer, in contrast to the typical multilayer but uncontrollable graphene growth on Ni substrates via efficient segregation and precipitation of highly soluble C atoms. 9 Extensive experimental efforts have also been made to increase the graphene thickness on Cu, [10][11][12][13][14][15] but hitherto only with limited success. To overcome this standing challenge, several new approaches have been proposed based on first-principles studies of graphene bilayer growth on Cu.…”

Section: 2mentioning

confidence: 99%

Atomistic mechanisms for bilayer growth of graphene on metal substrates

et al. 2015

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Epitaxial growth on metal substrates has been shown to be the most powerful approach in producing large-scale high-quality monolayer graphene, yet it remains a major challenge to realize uniform bilayer graphene growth. Here we carry out a comparative study of the atomistic mechanisms for bilayer graphene growth on the (111) surfaces of Cu and Ni, using multi-scale approaches combining first-principles calculations and rate equation analysis. We first show that the relatively weak graphene-Cu interaction enhances the lateral diffusion and effective nucleation of C atoms underneath the graphene island, thereby making it more feasible to grow bilayer graphene on Cu. In contrast, the stronger graphene-Ni interaction suppresses the lateral mobility and dimerization of C atoms underneath the graphene, making it unlikely to achieve controlled growth of bilayer graphene on Ni. We then determine the critical graphene size beyond which nucleation of the second layer will take place. Intriguingly, the critical size exhibits an effective inverse "Ehrlich-Schwoebel barrier" effect, becoming smaller for faster C migration from the Cu surface to the graphene-Cu interface sites across the graphene edge. These findings allow us to propose a novel alternating growth scheme to realize mass production of bilayer graphene.

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“…Significant efforts have been devoted to produce and study isotope-enriched graphene-related materials [4][5][6][7][8][9][10][11][12][13]. For instance, isotope labeling provided direct evidence that the growth mechanism of graphene is substrate dependent and, furthermore, shed light on the rational design of chemical vapor deposition (CVD) synthesis methods [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Probing carbon isotope effects on the Raman spectra of graphene with differentC13concentrations

et al. 2015

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A resonance Raman study of graphene samples with different 13 C isotopic concentrations and using different laser excitation energies is presented. The main Raman peaks (D, G, G * , and 2D) of graphene were measured and the dependence of their frequencies on the isotope atomic mass follows a simple harmonic oscillator relation. The G * and 2D double-resonance peak positions were measured as a function of the laser energy, and we observed that the slopes of the laser energy dependence are the same independently of isotope concentration. This result shows that isotopic substitution does not alter the electron and phonon dispersions near the K point of the graphene Brillouin zone. From the linewidth of G and 2D Raman peaks, we have also obtained a dependence of the phonon lifetime on the 13 C isotope concentration.

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Growth of Adlayer Graphene on Cu Studied by Carbon Isotope Labeling

Cited by 248 publications

References 24 publications

Radiation-mode optical microscopy on the growth of graphene

Radiation-mode optical microscopy on the growth of graphene

Atomistic mechanisms for bilayer growth of graphene on metal substrates

Probing carbon isotope effects on the Raman spectra of graphene with differentC13concentrations

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