Trivalent
bismuth (Bi3+) is put forward for the first
time as a multifunctional dopant to tailor the optoelectronic property
of silver sulfide (Ag2S), which is known as a promising
photoelectrode candidate in view of its narrow band gap of ∼1.1
eV comparable to that of its toxic PbS counterpart. The introduction
of Bi3+ into Ag2S gives rise to Bi:Ag2S to harvest light with a photon energy even lower than 1.1 eV via
providing additional energy levels within its band gap. The electrical
conductivity of Bi:Ag2S is also improved via offering extra
free electrons to increase the carrier concentration to facilitate
the transport of photoexcited electron–hole pairs. As an additional
result of such increment in electron density is the Fermi level of
Bi:Ag2S closer to its conduction band edge, leading to
its potential difference with respect to that of the sulfide (S2–) and sulfite (SO3
2–)
redox couples present in large quantity in industrial wastewater markedly
amplified. More importantly, the degree of surface band bending is
thereby well-strengthened to promote the separation of the photogenerated
electron–hole pairs, which is further reinforced by depositing
Bi:Ag2S on the zinc oxide nanorods (ZnO NRs) to form a
Bi:Ag2S/ZnO NR heterojunction. The synergistic effect of
the aforesaid enhancements renders the hydrogen evolution rate over
Bi:Ag2S/ZnO NRs largely accelerated, as evidently manifested
in its photocurrent density achieving 7 mA cm–2,
far exceeding those reported for additional Ag2S-based
photoelectrodes in the literature, of which the great promise is in
view of such outperformance well-corroborated.