Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array

Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Katsuhiro; Motohisa, Junichi; Fukui, Takashi

doi:10.1021/acs.nanolett.6b03727

Cited by 28 publications

(27 citation statements)

References 38 publications

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“…In a later work, the same group presented a detailed loss efficiency analysis together with some guidelines to make larger improvements in the LED performance . Quite recently, crystal phase engineering of NW growth , enabled wurtzite phosphide materials that has been employed to develop AlInP NWs with strong, room temperature emission in the green gap . With respect to axial current injection schemes, Scofield et al reported on a n-GaAs/i-InGaAs/p-GaAs axial heterostructure with GaAsP diffusion barriers to provide enhanced carrier confinement, providing a 5-fold increase in output intensity.…”

Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III−V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

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Section: Iii–v Nanowire Growth and Devicesmentioning

confidence: 99%

Synthesis and Applications of III–V Nanowires

et al. 2019

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“…As schematically shown in Figure a, the InP shell layer was grown to a thickness of about 10 nm in the radial direction to form the InGaAs/InP core–shell NWs. To facilitate shell growth, , the V/III material supply ratio was set higher and the growth temperature was lowered to 580 °C after the growth of InGaAs NWs (see the Supporting Information for details). Considering the In composition in the core (about 50–51%) and the thickness of the InP shell, the coherency of the lattice in the whole NW was maintained, and the InGaAs core was subject to the tensile strain.…”

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confidence: 99%

Vertical InGaAs Nanowire Array Photodiodes on Si

et al. 2019

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We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (∼1.55 μm). The vertical NWs were directly grown on Si by selective-area growth. Implementation of a heavily Sn-doped contact layer in the InGaAs NWs improved the diode characteristic because of a lower series resistance, and as a result, a photoresponsivity of 0.25 A/W was obtained at 635 nm, which was twice that before the improvement. Moreover, the photocurrent density of InGaAs–InP core–shell NWs was about 20-fold higher under illumination with light in the 1.55 μm wavelength band as a result of suppression of surface recombination. These findings are expected to be useful for NW-based photovoltaic applications for optical interconnection and Si platforms.

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“…Heurlin et al reported WZ InP/InGaAs NW core–shell heterostructures with light emission at ∼1.4 μm . Ishizaka et al have successfully grown WZ InP/GaP core–shell NWs, InP/AlGaP core–shell NWs, and InP/AlInP core–shell NWs for green light emission by employing the core WZ InP NW as a template to transfer the crystal structure to radially grown heterostructures. Recently Chang-Hasnain’s group reported optically pumped lasing at ∼1.3 μm and array LEDs with ∼1.5 μm from core–shell InGaAs/InP MQW nanopillars grown on Si by the SAE technique, demonstrating a great potential for achieving InGaAs QW-NW devices for optical communications.…”

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confidence: 99%

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

et al. 2018

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III–V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy (SAE) is of great importance for the development of nanoscale light-emitting devices for applications such as optical communication, silicon photonics, and quantum computing. To achieve highly efficient light-emitting devices, not only the high-quality materials but also a deep understanding of their growth mechanisms and material properties (structural, optical, and electrical) are extremely critical. In particular, the three-dimensional growth mechanism of MQWs embedded in a NW structure by SAE is expected to be different from that of those grown in a planar structure or with a catalyst and has not yet been thoroughly investigated. In this work, we reveal a distinctive radial growth evolution of InGaAs/InP MQW NWs grown by the SAE metal organic vapor-phase epitaxy (MOVPE) technique. We observe the formation of zinc blende (ZB) QW discs induced by the axial InGaAs QW growth on the wurtzite (WZ) base-InP NW and propose it as the key factor driving the overall structure of radial growth. The role of the ZB-to-WZ change in the driving of the overall growth evolution is supported by a growth formalism, taking into account the formation-energy difference between different facets. Despite a polytypic crystal structure with mixed ZB and WZ phases across the MQW region, the NWs exhibit high uniformity and desirable QW spatial layout with bright room-temperature photoluminescence at an optical communication wavelength of ∼1.3 μm, which is promising for the future development of high-efficiency light-emitting devices.

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Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array

Cited by 28 publications

References 38 publications

Synthesis and Applications of III–V Nanowires

Synthesis and Applications of III–V Nanowires

Vertical InGaAs Nanowire Array Photodiodes on Si

Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy

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